High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors

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Abstract

Staggered bottom gate transparent thin film transistors (TTFTs) have been produced by rf inagnetron sputtering at room temperature, using amorphous indium zinc oxide (IZO) semiconductor, for the channel as well as for the drain and source regions. The obtained TTFTs operate in the enhancement mode with threshold voltages of 2.4 V, saturation mobility of 22.7 cm(2)/V s, gate voltage swing of 0.44 V/dec and an ON/OFF current ratio of 7 x 10(7). The high performances presented by these TTFTs produced at room temperature, make these TFTs a promising candidate for flexible, wearable, disposable portable electronics as well as battery-powered applications. (c) 2007 Elsevier Ltd. All rights reserved.
Original languageEnglish
Pages (from-to)443-448
Number of pages6
JournalSolid-State Electronics
Volume52
Issue number3
DOIs
Publication statusPublished - Mar 2008

Keywords

  • Thin film transistors
  • gallium zinc
  • Gallium

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