TY - JOUR
T1 - High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors
AU - Fortunato, Elvira Maria Correia
AU - Barquinha, Pedro Miguel Cândido
AU - Gonçalves, G
AU - Pereira, Luis Miguel Nunes
AU - Martins, Rodrigo Ferrão de Paiva
PY - 2008/3
Y1 - 2008/3
N2 - Staggered bottom gate transparent thin film transistors (TTFTs) have been produced by rf inagnetron sputtering at room temperature, using amorphous indium zinc oxide (IZO) semiconductor, for the channel as well as for the drain and source regions. The obtained TTFTs operate in the enhancement mode with threshold voltages of 2.4 V, saturation mobility of 22.7 cm(2)/V s, gate voltage swing of 0.44 V/dec and an ON/OFF current ratio of 7 x 10(7). The high performances presented by these TTFTs produced at room temperature, make these TFTs a promising candidate for flexible, wearable, disposable portable electronics as well as battery-powered applications. (c) 2007 Elsevier Ltd. All rights reserved.
AB - Staggered bottom gate transparent thin film transistors (TTFTs) have been produced by rf inagnetron sputtering at room temperature, using amorphous indium zinc oxide (IZO) semiconductor, for the channel as well as for the drain and source regions. The obtained TTFTs operate in the enhancement mode with threshold voltages of 2.4 V, saturation mobility of 22.7 cm(2)/V s, gate voltage swing of 0.44 V/dec and an ON/OFF current ratio of 7 x 10(7). The high performances presented by these TTFTs produced at room temperature, make these TFTs a promising candidate for flexible, wearable, disposable portable electronics as well as battery-powered applications. (c) 2007 Elsevier Ltd. All rights reserved.
KW - room-temperature
KW - electronics
KW - silicon
KW - zno
KW - Thin film transistors
KW - gallium zinc
KW - Gallium
U2 - 10.1016/j.sse.2007.10.032
DO - 10.1016/j.sse.2007.10.032
M3 - Article
SN - 0038-1101
VL - 52
SP - 443
EP - 448
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 3
ER -