High mobility amorphous/nanocrystalline indium zinc oxide deposited at room temperature

Elvira Maria Correia Fortunato; Ana Cláudia Madeira Botas Gomes Pimentel; Alexandra Gonçalves; António Marques; Rodrigo Ferrão de Paiva Martins

doi:10.1016/j.tsf.2005.07.311

High mobility amorphous/nanocrystalline indium zinc oxide deposited at room temperature

Elvira Maria Correia Fortunato, Ana Cláudia Madeira Botas Gomes Pimentel, Alexandra Gonçalves, António Marques, Rodrigo Ferrão de Paiva Martins

DCM - Departamento de Ciência dos Materiais

Research output: Contribution to journal › Article › peer-review

67 Citations (Scopus)

Abstract

In this paper we present results of indium zinc oxide deposited at room temperature by rf magnetron sputtering, with an electron mobility as high as 60 cm(2)/Vs. The films present a resistivity as low as 5 x 10(-4) Omega cm, with an optical transmittance of 85%. The structure of these films seems to be polymorphous (mix of different amorphous and nanocrystalline phases from different origins) as detected from XRD patterns with a smooth surface and from SEM micrographs, is highly important to ensure a long lifetime when used in display devices.

Original language	English
Pages (from-to)	104-107
Number of pages	4
Journal	Thin Solid Films
Volume	502
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.07.311
Publication status	Published - 28 Apr 2006

Keywords

Electrical properties and measurements
Indium zinc oxide
Optical coatings
Sputtering
Electron mobilityLi
Light transmission
Microstructure
Magnetron sputtering
Nanostructured materials
X ray diffraction analysis
Nanocrystalline
Semiconducting indium compounds

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10.1016/j.tsf.2005.07.311

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title = "High mobility amorphous/nanocrystalline indium zinc oxide deposited at room temperature",

abstract = "In this paper we present results of indium zinc oxide deposited at room temperature by rf magnetron sputtering, with an electron mobility as high as 60 cm(2)/Vs. The films present a resistivity as low as 5 x 10(-4) Omega cm, with an optical transmittance of 85\%. The structure of these films seems to be polymorphous (mix of different amorphous and nanocrystalline phases from different origins) as detected from XRD patterns with a smooth surface and from SEM micrographs, is highly important to ensure a long lifetime when used in display devices.",

keywords = "optical coatings, electrical properties and measurements, sputtering, indium zinc oxide, Electrical properties and measurements, Indium zinc oxide, Optical coatings, Sputtering, Electron mobilityLi, Light transmission, Microstructure, Magnetron sputtering, Nanostructured materials, X ray diffraction analysis, Nanocrystalline, Semiconducting indium compounds",

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doi = "10.1016/j.tsf.2005.07.311",

language = "English",

volume = "502",

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journal = "Thin Solid Films",

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T1 - High mobility amorphous/nanocrystalline indium zinc oxide deposited at room temperature

AU - Fortunato, Elvira Maria Correia

AU - Pimentel, Ana Cláudia Madeira Botas Gomes

AU - Gonçalves, Alexandra

AU - Marques, António

AU - Martins, Rodrigo Ferrão de Paiva

PY - 2006/4/28

Y1 - 2006/4/28

N2 - In this paper we present results of indium zinc oxide deposited at room temperature by rf magnetron sputtering, with an electron mobility as high as 60 cm(2)/Vs. The films present a resistivity as low as 5 x 10(-4) Omega cm, with an optical transmittance of 85%. The structure of these films seems to be polymorphous (mix of different amorphous and nanocrystalline phases from different origins) as detected from XRD patterns with a smooth surface and from SEM micrographs, is highly important to ensure a long lifetime when used in display devices.

AB - In this paper we present results of indium zinc oxide deposited at room temperature by rf magnetron sputtering, with an electron mobility as high as 60 cm(2)/Vs. The films present a resistivity as low as 5 x 10(-4) Omega cm, with an optical transmittance of 85%. The structure of these films seems to be polymorphous (mix of different amorphous and nanocrystalline phases from different origins) as detected from XRD patterns with a smooth surface and from SEM micrographs, is highly important to ensure a long lifetime when used in display devices.

KW - optical coatings

KW - electrical properties and measurements

KW - sputtering

KW - indium zinc oxide

KW - Electrical properties and measurements

KW - Indium zinc oxide

KW - Optical coatings

KW - Sputtering

KW - Electron mobilityLi

KW - Light transmission

KW - Microstructure

KW - Magnetron sputtering

KW - Nanostructured materials

KW - X ray diffraction analysis

KW - Nanocrystalline

KW - Semiconducting indium compounds

U2 - 10.1016/j.tsf.2005.07.311

DO - 10.1016/j.tsf.2005.07.311

M3 - Article

SN - 0040-6090

VL - 502

SP - 104

EP - 107

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

High mobility amorphous/nanocrystalline indium zinc oxide deposited at room temperature

Abstract

Keywords

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