High-gain amplifier with n-type transistors

Pydi Bahubalindruni; Vitor Grade Tavares; Pedro Guedes De Oliveira; Pedro Barquinha; Rodrigo Martins; Elvira Fortunato

doi:10.1109/EDSSC.2013.6628203

High-gain amplifier with n-type transistors

Pydi Bahubalindruni, Vitor Grade Tavares, Pedro Guedes De Oliveira, Pedro Barquinha, Rodrigo Martins, Elvira Fortunato

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Citations (Scopus)

Abstract

A high-gain amplifier topology, with all single n-type enhancement transistors, is proposed in this paper. This type of circuits are essential in transparent TFT technologies, such as GIZO and ZnO that lack complementary type transistor. All circuits were simulated using BSIM3V3 model of a 0.35 μm CMOS technology, due to the absence of a complete electrical model for the TFTs. Results reveal that the proposed circuit promise more gain, lower power consumption and higher bandwidth than the existing solutions under identical bias conditions.

Original language	English
Title of host publication	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs	https://doi.org/10.1109/EDSSC.2013.6628203
Publication status	Published - 23 Dec 2013
Event	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong Duration: 3 Jun 2013 → 5 Jun 2013

Conference

Conference	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
Country/Territory	Hong Kong
City	Hong Kong
Period	3/06/13 → 5/06/13

Keywords

Thin film transistors
Semiconducting organic
Compounds
Printed electronics

Access to Document

10.1109/EDSSC.2013.6628203

Cite this

@inproceedings{ec7016c4141a4a418d0268f2b5186ed6,

title = "High-gain amplifier with n-type transistors",

abstract = "A high-gain amplifier topology, with all single n-type enhancement transistors, is proposed in this paper. This type of circuits are essential in transparent TFT technologies, such as GIZO and ZnO that lack complementary type transistor. All circuits were simulated using BSIM3V3 model of a 0.35 μm CMOS technology, due to the absence of a complete electrical model for the TFTs. Results reveal that the proposed circuit promise more gain, lower power consumption and higher bandwidth than the existing solutions under identical bias conditions.",

keywords = "Thin film transistors, Semiconducting organic, Compounds, Printed electronics",

author = "Pydi Bahubalindruni and Tavares, {Vitor Grade} and {De Oliveira}, {Pedro Guedes} and Pedro Barquinha and Rodrigo Martins and Elvira Fortunato",

year = "2013",

month = dec,

day = "23",

doi = "10.1109/EDSSC.2013.6628203",

language = "English",

isbn = "978-1-4673-2523-3",

booktitle = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013",

note = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 ; Conference date: 03-06-2013 Through 05-06-2013",

}

Bahubalindruni, P, Tavares, VG, De Oliveira, PG, Barquinha, P , Martins, R & Fortunato, E 2013, High-gain amplifier with n-type transistors. in 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013., 6628203, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, Hong Kong, Hong Kong, 3/06/13. https://doi.org/10.1109/EDSSC.2013.6628203

TY - GEN

T1 - High-gain amplifier with n-type transistors

AU - Bahubalindruni, Pydi

AU - Tavares, Vitor Grade

AU - De Oliveira, Pedro Guedes

AU - Barquinha, Pedro

AU - Martins, Rodrigo

AU - Fortunato, Elvira

PY - 2013/12/23

Y1 - 2013/12/23

N2 - A high-gain amplifier topology, with all single n-type enhancement transistors, is proposed in this paper. This type of circuits are essential in transparent TFT technologies, such as GIZO and ZnO that lack complementary type transistor. All circuits were simulated using BSIM3V3 model of a 0.35 μm CMOS technology, due to the absence of a complete electrical model for the TFTs. Results reveal that the proposed circuit promise more gain, lower power consumption and higher bandwidth than the existing solutions under identical bias conditions.

AB - A high-gain amplifier topology, with all single n-type enhancement transistors, is proposed in this paper. This type of circuits are essential in transparent TFT technologies, such as GIZO and ZnO that lack complementary type transistor. All circuits were simulated using BSIM3V3 model of a 0.35 μm CMOS technology, due to the absence of a complete electrical model for the TFTs. Results reveal that the proposed circuit promise more gain, lower power consumption and higher bandwidth than the existing solutions under identical bias conditions.

KW - Thin film transistors

KW - Semiconducting organic

KW - Compounds

KW - Printed electronics

UR - http://www.scopus.com/inward/record.url?scp=84890482228&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2013.6628203

DO - 10.1109/EDSSC.2013.6628203

M3 - Conference contribution

AN - SCOPUS:84890482228

SN - 978-1-4673-2523-3

BT - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

T2 - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Y2 - 3 June 2013 through 5 June 2013

ER -

High-gain amplifier with n-type transistors

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