High-gain amplifier with n-type transistors

Pydi Bahubalindruni, Vitor Grade Tavares, Pedro Guedes De Oliveira, Pedro Barquinha, Rodrigo Martins, Elvira Fortunato

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

A high-gain amplifier topology, with all single n-type enhancement transistors, is proposed in this paper. This type of circuits are essential in transparent TFT technologies, such as GIZO and ZnO that lack complementary type transistor. All circuits were simulated using BSIM3V3 model of a 0.35 μm CMOS technology, due to the absence of a complete electrical model for the TFTs. Results reveal that the proposed circuit promise more gain, lower power consumption and higher bandwidth than the existing solutions under identical bias conditions.

Original languageEnglish
Title of host publication2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs
Publication statusPublished - 23 Dec 2013
Event2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong
Duration: 3 Jun 20135 Jun 2013

Conference

Conference2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
CountryHong Kong
CityHong Kong
Period3/06/135/06/13

Keywords

  • Thin film transistors
  • Semiconducting organic
  • Compounds
  • Printed electronics

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  • Cite this

    Bahubalindruni, P., Tavares, V. G., De Oliveira, P. G., Barquinha, P., Martins, R., & Fortunato, E. (2013). High-gain amplifier with n-type transistors. In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 [6628203] https://doi.org/10.1109/EDSSC.2013.6628203