132 Citations (Scopus)

Abstract

In this paper we present the first results of thin film transistors produced completely at room temperature using ZnO as the active channel and silicon oxynitride as the gate dielectric. The ZnO-based thin film transistors (ZnO-TFT) present an average optical transmission (including the glass substrate) of 84% in the visible part of the spectrum. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 1.8 V. A field effect mobility of 70 cm(2)/V s, a gate voltage swing of 0.68 V/decade and an on-off ratio of 5 x 105 were obtained. The combination of transparency, high field-effect mobility and room temperature processing makes the ZnO-TFT very promising for the next generation of invisible and flexible electronics.
Original languageEnglish
Pages (from-to)806-809
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume338-340
Issue number1 SPEC. ISS.
DOIs
Publication statusPublished - 15 Jun 2004

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