TY - JOUR
T1 - High field-effect mobility zinc oxide thin film transistors produced at room temperature
AU - Fortunato, Elvira Maria Correia
AU - Pimentel, Ana Cláudia Madeira Botas Gomes
AU - Pereira, Luis Miguel Nunes
AU - Gonçalves, Alexandra
AU - Lavareda, G. Lavareda
AU - Aguas, Hugo
AU - Ferreira, Isabel
AU - Carvalho, N.
AU - Martins, Rodrigo Ferrão de Paiva
PY - 2004/6/15
Y1 - 2004/6/15
N2 - In this paper we present the first results of thin film transistors produced completely at room temperature using ZnO as the active channel and silicon oxynitride as the gate dielectric. The ZnO-based thin film transistors (ZnO-TFT) present an average optical transmission (including the glass substrate) of 84% in the visible part of the spectrum. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 1.8 V. A field effect mobility of 70 cm(2)/V s, a gate voltage swing of 0.68 V/decade and an on-off ratio of 5 x 105 were obtained. The combination of transparency, high field-effect mobility and room temperature processing makes the ZnO-TFT very promising for the next generation of invisible and flexible electronics.
AB - In this paper we present the first results of thin film transistors produced completely at room temperature using ZnO as the active channel and silicon oxynitride as the gate dielectric. The ZnO-based thin film transistors (ZnO-TFT) present an average optical transmission (including the glass substrate) of 84% in the visible part of the spectrum. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 1.8 V. A field effect mobility of 70 cm(2)/V s, a gate voltage swing of 0.68 V/decade and an on-off ratio of 5 x 105 were obtained. The combination of transparency, high field-effect mobility and room temperature processing makes the ZnO-TFT very promising for the next generation of invisible and flexible electronics.
KW - ZNO
KW - TRANSPARENT
U2 - 10.1016/j.jononcrysol.2004.03.096
DO - 10.1016/j.jononcrysol.2004.03.096
M3 - Article
SN - 0022-3093
VL - 338-340
SP - 806
EP - 809
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
IS - 1 SPEC. ISS.
ER -