Abstract
The aim of this work is to present the main optoelectronic characteristics of large area 1D position sensitive detectors based on amorphous silicon p-i-n diodes. From that, the device resolution, response time and detectivity are derived and discussed concerning the field of applications of the 1D thin film position sensitive detectors.
| Original language | English |
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| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Publisher | Society of Photo-Optical Instrumentation Engineers |
| Pages | 259-270 |
| Number of pages | 12 |
| Volume | 2397 |
| ISBN (Print) | 0819417440 |
| Publication status | Published - 1995 |
| Event | Optoelectronic Integrated Circuit Materials, Physics, and Devices - San Jose, CA, USA Duration: 6 Feb 1995 → 9 Feb 1995 |
Conference
| Conference | Optoelectronic Integrated Circuit Materials, Physics, and Devices |
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| City | San Jose, CA, USA |
| Period | 6/02/95 → 9/02/95 |