Growth of aluminum oxide on silicon carbide with an atomically sharp interface

Chemistry

• Silicon Carbide 100%
• Electronic Device Fabrication 54%
• Dielectric Material 52%
• Interface State 45%
• Band Gap 44%
• Liquid Film 43%
• Atomic Layer Epitaxy 34%
• Oxide 32%
• Field Effect 29%
• Surface 28%
• Dielectric Constant 27%
• Electric Field 26%
• Vacuum 23%
• Semiconductor 22%
• Amorphous Material 20%
• Coating Agent 17%

Physics & Astronomy

• silicon carbides 86%
• aluminum oxides 73%
• coatings 30%
• oxides 27%
• atomic layer epitaxy 23%
• metal oxide semiconductors 22%
• ultrahigh vacuum 22%
• passivity 20%
• field effect transistors 17%
• breakdown 17%
• wafers 16%
• permittivity 15%
• heating 14%
• fabrication 13%
• electric fields 13%
• electronics 11%
• thin films 11%

Engineering & Materials Science

• Silicon carbide 96%
• Aluminum oxide 85%
• Energy gap 25%
• Oxides 19%
• Ultrahigh vacuum 17%
• Interface states 17%
• Atomic layer deposition 17%
• Coatings 16%
• Gate dielectrics 15%
• Passivation 13%
• MOSFET devices 13%
• Permittivity 11%
• Thin films 10%
• Electric fields 10%
• Semiconductor materials 9%
• Materials properties 9%
• Fabrication 8%
• Heating 8%