Growth of aluminium oxide on SiC

After growing the SiC/Si system (SiC thickness between 0.5 and 5 nm; polycrystalline) a self-limiting Si-oxide layer was grown on the surface at 7000C. On top of this layer we deposited approximately 1 nm of Al with a Knudsen atomic source (all steps in UHV) and then reacted it thermally (at 6000C) with the Si-oxide. We monitored all the process steps and the resulting structures of the layers and the interface using synchrotron radiation induced core level photoemission at ASTRID, Aarhus, Denmark