Growth of aluminium oxide on SiC

Research output: Other contribution

Abstract

After growing the SiC/Si system (SiC thickness between 0.5 and 5 nm; polycrystalline) a self-limiting Si-oxide layer was grown on the surface at 7000C. On top of this layer we deposited approximately 1 nm of Al with a Knudsen atomic source (all steps in UHV) and then reacted it thermally (at 6000C) with the Si-oxide. We monitored all the process steps and the resulting structures of the layers and the interface using synchrotron radiation induced core level photoemission at ASTRID, Aarhus, Denmark
Original languageEnglish
Volume1
Publication statusPublished - 2014

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