Growth model of gas species produced by the hot-wire and hot-wire plasma-assisted techniques

Research output: Contribution to journalArticle

Abstract

The model presented is based on the heat transfer and energy balance equations that rule the set of physical and chemical interactions that take place on the gas phase of a growth process, assuming that the deposition process occurs under laminar dynamic flow conditions (Knudsen number below 1). In these conditions, the chemistry and physics of the process involved in the growth mechanism of silicon thin films produced by the hot wire or the hot-wire plasma assisted technique can be proper derived by balance equations that supply information about how the plasma density, the gas dilution and the gas temperature influence the growth mechanism and the equilibrium of the concentration of species presented on the growth surface. The model developed establishes a relation between the abundance species formed and the parameters initiators of the process such as the filament temperature and the rf power density used.

Original languageEnglish
Pages (from-to)603-606
Number of pages4
JournalBioceramics 18, Pts 1 And 2
Volume230-232
Publication statusPublished - 2002

Keywords

  • Growth Mechanism
  • Optoelectronic Materials
  • Silicon Thin Films

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