Ground-state Lande g factors for selected ions along the boron isoelectronic sequence

J. P. Marques; P. Indelicato; F. Parente; J. M. Sampaio; J. P. Santos

doi:10.1103/PhysRevA.94.042504

Ground-state Lande g factors for selected ions along the boron isoelectronic sequence

J. P. Marques, P. Indelicato, F. Parente, J. M. Sampaio, J. P. Santos

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Lande g factors for the fine-structure 1s(2)2s(2)2p(2)P(1/2) and P-2(3/2) levels in the boron isoelectronic sequence for selected Z values have been calculated using the multiconfiguration Dirac-Fock method with both quantum-electrodynamic and electronic correlation corrections included. All-order Breit and vacuum polarization corrections were included in the calculation, with a fully optimized active set wave function. The results are compared with the available theoretical data, showing a very good agreement.

Original language	English
Article number	042504
Journal	Physical Review A
Volume	94
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevA.94.042504
Publication status	Published - 4 Oct 2016

Keywords

DIRAC-FOCK CALCULATIONS
ELECTRON SELF-ENERGY
STRONG COULOMB FIELD
HYPERFINE STRUCTURES
QED CORRECTIONS
RATES
G(J)-FACTORS
ELEMENTS
CARBON
CONFIGURATION

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title = "Ground-state Lande g factors for selected ions along the boron isoelectronic sequence",

abstract = "Lande g factors for the fine-structure 1s(2)2s(2)2p(2)P(1/2) and P-2(3/2) levels in the boron isoelectronic sequence for selected Z values have been calculated using the multiconfiguration Dirac-Fock method with both quantum-electrodynamic and electronic correlation corrections included. All-order Breit and vacuum polarization corrections were included in the calculation, with a fully optimized active set wave function. The results are compared with the available theoretical data, showing a very good agreement.",

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T1 - Ground-state Lande g factors for selected ions along the boron isoelectronic sequence

AU - Marques, J. P.

AU - Indelicato, P.

AU - Parente, F.

AU - Sampaio, J. M.

AU - Santos, J. P.

N1 - Sem PDF.

PY - 2016/10/4

Y1 - 2016/10/4

N2 - Lande g factors for the fine-structure 1s(2)2s(2)2p(2)P(1/2) and P-2(3/2) levels in the boron isoelectronic sequence for selected Z values have been calculated using the multiconfiguration Dirac-Fock method with both quantum-electrodynamic and electronic correlation corrections included. All-order Breit and vacuum polarization corrections were included in the calculation, with a fully optimized active set wave function. The results are compared with the available theoretical data, showing a very good agreement.

AB - Lande g factors for the fine-structure 1s(2)2s(2)2p(2)P(1/2) and P-2(3/2) levels in the boron isoelectronic sequence for selected Z values have been calculated using the multiconfiguration Dirac-Fock method with both quantum-electrodynamic and electronic correlation corrections included. All-order Breit and vacuum polarization corrections were included in the calculation, with a fully optimized active set wave function. The results are compared with the available theoretical data, showing a very good agreement.

KW - DIRAC-FOCK CALCULATIONS

KW - ELECTRON SELF-ENERGY

KW - STRONG COULOMB FIELD

KW - HYPERFINE STRUCTURES

KW - QED CORRECTIONS

KW - RATES

KW - G(J)-FACTORS

KW - ELEMENTS

KW - CARBON

KW - CONFIGURATION

U2 - 10.1103/PhysRevA.94.042504

DO - 10.1103/PhysRevA.94.042504

M3 - Article

SN - 2469-9926

VL - 94

JO - Physical Review A

JF - Physical Review A

IS - 4

M1 - 042504

ER -

Ground-state Lande g factors for selected ions along the boron isoelectronic sequence

Abstract

Keywords

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