FUV-assisted low temperature AlOx solution based dielectric for oxide TFTs

Emanuel Carlos; Rita Branquinho; Asal  Kiazadeh; Pedro Miguel Cândido Barquinha; Rodrigo Ferrão de Paiva Martins; Elvira Maria Correia Fortunato

FUV-assisted low temperature AlOx solution based dielectric for oxide TFTs

Emanuel Carlos, Rita Branquinho, Asal Kiazadeh, Pedro Miguel Cândido Barquinha, Rodrigo Ferrão de Paiva Martins, Elvira Maria Correia Fortunato

Research output: Contribution to conference › Poster › peer-review

Abstract

Solution processing of amorphous metal oxides has been lately used as an option to implement in flexible electronics allowing a reduction of the associated costs and increased performance. However the research has focused more on semiconductor layer rather than on the insulator layer that is related to the stability andperformance of the devices.
This work aims to evaluate amorphous aluminum oxide thin films produced by combustion synthesis and the influence of far ultraviolet (FUV) irradiation on properties of the insulator on thin film transistors (TFTs) using different semiconductors, in order to have compatibility with flexible substrates. [1–3] Optimized dielectric layer was obtained for an annealing of 30 minutes assisted by FUV exposure.

Original language	English
Publication status	Published - May 2016
Event	E-MRS 2016 Spring Meeting - Lille Grand Palais, Lille, France Duration: 2 May 2016 → 6 May 2016 http://www.european-mrs.com/meetings/2016-spring-meeting

Conference

Conference	E-MRS 2016 Spring Meeting
Abbreviated title	E-MRS 2016 Spring Meeting
Country/Territory	France
City	Lille
Period	2/05/16 → 6/05/16
Internet address	http://www.european-mrs.com/meetings/2016-spring-meeting

Cite this

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title = "FUV-assisted low temperature AlOx solution based dielectric for oxide TFTs",

abstract = "Solution processing of amorphous metal oxides has been lately used as an option to implement in flexible electronics allowing a reduction of the associated costs and increased performance. However the research has focused more on semiconductor layer rather than on the insulator layer that is related to the stability andperformance of the devices.This work aims to evaluate amorphous aluminum oxide thin films produced by combustion synthesis and the influence of far ultraviolet (FUV) irradiation on properties of the insulator on thin film transistors (TFTs) using different semiconductors, in order to have compatibility with flexible substrates. [1–3] Optimized dielectric layer was obtained for an annealing of 30 minutes assisted by FUV exposure.",

author = "Emanuel Carlos and Rita Branquinho and Asal Kiazadeh and Barquinha, {Pedro Miguel C{\^a}ndido} and Martins, {Rodrigo Ferr{\~a}o de Paiva} and Fortunato, {Elvira Maria Correia}",

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T1 - FUV-assisted low temperature AlOx solution based dielectric for oxide TFTs

AU - Carlos, Emanuel

AU - Branquinho, Rita

AU - Kiazadeh, Asal

AU - Barquinha, Pedro Miguel Cândido

AU - Martins, Rodrigo Ferrão de Paiva

AU - Fortunato, Elvira Maria Correia

N1 - Sem PDF.

PY - 2016/5

Y1 - 2016/5

N2 - Solution processing of amorphous metal oxides has been lately used as an option to implement in flexible electronics allowing a reduction of the associated costs and increased performance. However the research has focused more on semiconductor layer rather than on the insulator layer that is related to the stability andperformance of the devices.This work aims to evaluate amorphous aluminum oxide thin films produced by combustion synthesis and the influence of far ultraviolet (FUV) irradiation on properties of the insulator on thin film transistors (TFTs) using different semiconductors, in order to have compatibility with flexible substrates. [1–3] Optimized dielectric layer was obtained for an annealing of 30 minutes assisted by FUV exposure.

AB - Solution processing of amorphous metal oxides has been lately used as an option to implement in flexible electronics allowing a reduction of the associated costs and increased performance. However the research has focused more on semiconductor layer rather than on the insulator layer that is related to the stability andperformance of the devices.This work aims to evaluate amorphous aluminum oxide thin films produced by combustion synthesis and the influence of far ultraviolet (FUV) irradiation on properties of the insulator on thin film transistors (TFTs) using different semiconductors, in order to have compatibility with flexible substrates. [1–3] Optimized dielectric layer was obtained for an annealing of 30 minutes assisted by FUV exposure.

UR - https://www.researchgate.net/publication/309548967_FUV-assisted_low_temperature_AlOx_solution_based_dielectric_for_oxide_TFTs

M3 - Poster

T2 - E-MRS 2016 Spring Meeting

Y2 - 2 May 2016 through 6 May 2016

ER -

FUV-assisted low temperature AlOx solution based dielectric for oxide TFTs

Abstract

Conference

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