FUV-assisted low temperature AlOx solution based dielectric for oxide TFTs

Research output: Contribution to conferencePosterpeer-review


Solution processing of amorphous metal oxides has been lately used as an option to implement in flexible electronics allowing a reduction of the associated costs and increased performance. However the research has focused more on semiconductor layer rather than on the insulator layer that is related to the stability andperformance of the devices.
This work aims to evaluate amorphous aluminum oxide thin films produced by combustion synthesis and the influence of far ultraviolet (FUV) irradiation on properties of the insulator on thin film transistors (TFTs) using different semiconductors, in order to have compatibility with flexible substrates. [1–3] Optimized dielectric layer was obtained for an annealing of 30 minutes assisted by FUV exposure.
Original languageEnglish
Publication statusPublished - May 2016
EventE-MRS 2016 Spring Meeting - Lille Grand Palais, Lille, France
Duration: 2 May 20166 May 2016


ConferenceE-MRS 2016 Spring Meeting
Abbreviated titleE-MRS 2016 Spring Meeting
Internet address


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