Fully transparent ZnO thin-film transistor produced at room temperature

Elvira M.C. Fortunato; Pedro M.C. Barquinha; Ana C.M.B.G. Pimentel; Alexandra M.F. Gonçalves; António J.S. Marques; Luís M.N. Pereira; Rodrigo F.P. Martins

doi:10.1002/adma.200400368

Fully transparent ZnO thin-film transistor produced at room temperature

Elvira M.C. Fortunato, Pedro M.C. Barquinha, Ana C.M.B.G. Pimentel, Alexandra M.F. Gonçalves, António J.S. Marques, Luís M.N. Pereira, Rodrigo F.P. Martins

Research output: Contribution to journal › Article › peer-review

920 Citations (Scopus)

Abstract

The possibility of fabricating high-mobility ZnO thin-film transistors (ZnO-TFT) at room temperature by rf magnetron sputtering was discussed. It was found that the films were nanocrystalline with a hexagonal structure and exhibited a preferred orientation with the c-axis perpendicular to the substrate. The undoped ZnO films exhibited improved crystallinity fraction of the nanocrystals and low oxygen vacancies. Analysis shows that the exposure of the ZnO-TFTs to the ambient light has no effect on the current voltage characteristics.

Original language	English
Pages (from-to)	590-594
Number of pages	5
Journal	Advanced Materials
Volume	17
Issue number	5
DOIs	https://doi.org/10.1002/adma.200400368
Publication status	Published - 8 Mar 2005

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@article{96948f7cf890491eafdee90edf071dfb,

title = "Fully transparent ZnO thin-film transistor produced at room temperature",

abstract = "The possibility of fabricating high-mobility ZnO thin-film transistors (ZnO-TFT) at room temperature by rf magnetron sputtering was discussed. It was found that the films were nanocrystalline with a hexagonal structure and exhibited a preferred orientation with the c-axis perpendicular to the substrate. The undoped ZnO films exhibited improved crystallinity fraction of the nanocrystals and low oxygen vacancies. Analysis shows that the exposure of the ZnO-TFTs to the ambient light has no effect on the current voltage characteristics.",

author = "Fortunato, \{Elvira M.C.\} and Barquinha, \{Pedro M.C.\} and Pimentel, \{Ana C.M.B.G.\} and Gon{\c c}alves, \{Alexandra M.F.\} and Marques, \{Ant{\'o}nio J.S.\} and Pereira, \{Lu{\'i}s M.N.\} and Martins, \{Rodrigo F.P.\}",

year = "2005",

month = mar,

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doi = "10.1002/adma.200400368",

language = "English",

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journal = "Advanced Materials",

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T1 - Fully transparent ZnO thin-film transistor produced at room temperature

AU - Fortunato, Elvira M.C.

AU - Barquinha, Pedro M.C.

AU - Pimentel, Ana C.M.B.G.

AU - Gonçalves, Alexandra M.F.

AU - Marques, António J.S.

AU - Pereira, Luís M.N.

AU - Martins, Rodrigo F.P.

PY - 2005/3/8

Y1 - 2005/3/8

N2 - The possibility of fabricating high-mobility ZnO thin-film transistors (ZnO-TFT) at room temperature by rf magnetron sputtering was discussed. It was found that the films were nanocrystalline with a hexagonal structure and exhibited a preferred orientation with the c-axis perpendicular to the substrate. The undoped ZnO films exhibited improved crystallinity fraction of the nanocrystals and low oxygen vacancies. Analysis shows that the exposure of the ZnO-TFTs to the ambient light has no effect on the current voltage characteristics.

AB - The possibility of fabricating high-mobility ZnO thin-film transistors (ZnO-TFT) at room temperature by rf magnetron sputtering was discussed. It was found that the films were nanocrystalline with a hexagonal structure and exhibited a preferred orientation with the c-axis perpendicular to the substrate. The undoped ZnO films exhibited improved crystallinity fraction of the nanocrystals and low oxygen vacancies. Analysis shows that the exposure of the ZnO-TFTs to the ambient light has no effect on the current voltage characteristics.

UR - https://www.scopus.com/pages/publications/16244382410

U2 - 10.1002/adma.200400368

DO - 10.1002/adma.200400368

M3 - Article

AN - SCOPUS:16244382410

SN - 0935-9648

VL - 17

SP - 590

EP - 594

JO - Advanced Materials

JF - Advanced Materials

IS - 5

ER -

Fully transparent ZnO thin-film transistor produced at room temperature

Abstract

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