TY - JOUR
T1 - Fully transparent ZnO thin-film transistor produced at room temperature
AU - Fortunato, Elvira M.C.
AU - Barquinha, Pedro M.C.
AU - Pimentel, Ana C.M.B.G.
AU - Gonçalves, Alexandra M.F.
AU - Marques, António J.S.
AU - Pereira, Luís M.N.
AU - Martins, Rodrigo F.P.
PY - 2005/3/8
Y1 - 2005/3/8
N2 - The possibility of fabricating high-mobility ZnO thin-film transistors (ZnO-TFT) at room temperature by rf magnetron sputtering was discussed. It was found that the films were nanocrystalline with a hexagonal structure and exhibited a preferred orientation with the c-axis perpendicular to the substrate. The undoped ZnO films exhibited improved crystallinity fraction of the nanocrystals and low oxygen vacancies. Analysis shows that the exposure of the ZnO-TFTs to the ambient light has no effect on the current voltage characteristics.
AB - The possibility of fabricating high-mobility ZnO thin-film transistors (ZnO-TFT) at room temperature by rf magnetron sputtering was discussed. It was found that the films were nanocrystalline with a hexagonal structure and exhibited a preferred orientation with the c-axis perpendicular to the substrate. The undoped ZnO films exhibited improved crystallinity fraction of the nanocrystals and low oxygen vacancies. Analysis shows that the exposure of the ZnO-TFTs to the ambient light has no effect on the current voltage characteristics.
UR - http://www.scopus.com/inward/record.url?scp=16244382410&partnerID=8YFLogxK
U2 - 10.1002/adma.200400368
DO - 10.1002/adma.200400368
M3 - Article
AN - SCOPUS:16244382410
SN - 0935-9648
VL - 17
SP - 590
EP - 594
JO - Advanced Materials
JF - Advanced Materials
IS - 5
ER -