TY - JOUR
T1 - Fully solution-induced high performance indium oxide thin film transistors with ZrO: x high-k gate dielectrics
AU - Zhu, Li
AU - He, Gang
AU - Lv, Jianguo
AU - Fortunato, Elvira
AU - Martins, Rodrigo
N1 - The authors acknowledge the support from National Natural Science Foundation of China (11774001, 51572002), Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China (J05015131), Anhui Provincial Natural Science Foundation (1608085MA06).
PY - 2018/1/1
Y1 - 2018/1/1
N2 - Solution based deposition has been recently considered as a viable option for low-cost flexible electronics. In this context, research efforts have been increasingly focused on the development of suitable solution-processed materials for oxide based transistors. In this work, we report a fully solution synthesis route, using 2-methoxyethanol as solvent, for the preparation of In2O3 thin films and ZrOx gate dielectrics, as well as the fabrication of In2O3-based TFTs. To verify the possible applications of ZrOx thin films as the gate dielectric in complementary metal oxide semiconductor (CMOS) electronics, fully solution-induced In2O3 TFTs based on ZrO2 dielectrics have been integrated and investigated. The devices, with an optimized annealing temperature of 300 °C, have demonstrated high electrical performance and operational stability at a low voltage of 2 V, including a high μsat of 4.42 cm2 V-1 s-1, low threshold voltage of 0.31 V, threshold voltage shift of 0.15 V under positive bias stress for 7200 s, and large Ion/Ioff of 7.5 × 107, respectively. The as-fabricated In2O3/ZrOx TFTs enable fully solution-derived oxide TFTs for potential application in portable and low-power consumption electronics.
AB - Solution based deposition has been recently considered as a viable option for low-cost flexible electronics. In this context, research efforts have been increasingly focused on the development of suitable solution-processed materials for oxide based transistors. In this work, we report a fully solution synthesis route, using 2-methoxyethanol as solvent, for the preparation of In2O3 thin films and ZrOx gate dielectrics, as well as the fabrication of In2O3-based TFTs. To verify the possible applications of ZrOx thin films as the gate dielectric in complementary metal oxide semiconductor (CMOS) electronics, fully solution-induced In2O3 TFTs based on ZrO2 dielectrics have been integrated and investigated. The devices, with an optimized annealing temperature of 300 °C, have demonstrated high electrical performance and operational stability at a low voltage of 2 V, including a high μsat of 4.42 cm2 V-1 s-1, low threshold voltage of 0.31 V, threshold voltage shift of 0.15 V under positive bias stress for 7200 s, and large Ion/Ioff of 7.5 × 107, respectively. The as-fabricated In2O3/ZrOx TFTs enable fully solution-derived oxide TFTs for potential application in portable and low-power consumption electronics.
UR - http://www.scopus.com/inward/record.url?scp=85046893780&partnerID=8YFLogxK
U2 - 10.1039/c8ra02108b
DO - 10.1039/c8ra02108b
M3 - Article
AN - SCOPUS:85046893780
VL - 8
SP - 16788
EP - 16799
JO - Rsc Advances
JF - Rsc Advances
SN - 2046-2069
IS - 30
ER -