@inproceedings{6fba9f4ec2d3496c8a953f6c398ed83e,
title = "Fully Automatic Evaluation of IGZO-TFT Model Parameters",
abstract = "This paper presents a fully automatic modeling and parameter extraction strategy for the above-threshold and sub-threshold characteristics of Indium Gallium Zinc Oxide (IGZO) thin-film transistors (TFTs) in both linear and saturation regions of operation. A semi-physical analytical description of the current-voltage characteristics, which is captured using a single unified expression applicable to both operational regions is considered. The results obtained with the proposed methodology were compared to experimental data and a relative error below 10% is obtained for VGS ≥ 1V in saturation and in linear regimes.",
keywords = "Amorphous semiconductors, compact modeling, contact resistance, parameter extraction, thin film transistors (TFTs)",
author = "Carolina Almeida and Fino, {M. Helena}",
note = "Funding Information: The authors would like to thank Professor Pedro Barquinha for providing the experimental data, and UNINOVA for the laboratory facilities that supported the development of the experimental work underpinning the results presented in this paper. Publisher Copyright: {\textcopyright} 2025 IEEE.; 9th International Young Engineers Forum on Electrical and Computer Engineering, YEF-ECE 2025 ; Conference date: 04-07-2025",
year = "2025",
doi = "10.1109/YEF-ECE66503.2025.11117522",
language = "English",
series = "Proceedings - 2025 9th International Young Engineers Forum on Electrical and Computer Engineering, YEF-ECE 2025",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
pages = "169--174",
booktitle = "Proceedings - 2025 9th International Young Engineers Forum on Electrical and Computer Engineering, YEF-ECE 2025",
address = "United States",
}