From porous to compact films by changing the onset conditions of HW-CVD process

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Abstract

Doped a/μc-Si:H films were produced in different starting deposition conditions by the hot wire chemical vapor deposition technique. In this paper, we show that by changing the initial onset deposition conditions of the process and maintaining the overall pressure, hydrogen dilution and filament temperature, it is possible to control the compactness of the films. As the films nucleation is the key parameter to produce compact films, we show that starting the process with hydrogen and progressively introducing the process gas enhances the compactness and improve the electrical properties of the films produced.

Original languageEnglish
Pages (from-to)225-230
Number of pages6
JournalTHIN SOLID FILMS
Volume427
Issue number1-2
DOIs
Publication statusPublished - 3 Mar 2003

Keywords

  • Compactness
  • Doped microcrystalline silicon films
  • HW-CVD

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