@article{e86ceb4a134c4229a3790e3340cfbe6e,
title = "Extended-Gate ISFETs Based on Sputtered Amorphous Oxides",
abstract = "We present the results obtained with anextended-gateISFET totallybasedonamorphousoxides(GIZO as the semiconductor, Ta2O5: SiO2 as the dielectric and Ta2O5 as the sensitive layer). A full characterization of the device was performed with constant ionic strength pH buffer solutions, revealing a sensitivity of 40 mV/pH with small hysteresis, and good linearity in the pH 4-pH 10 range buffer solutions. These results clearly show that it is possible to produce room-temperature disposable and low cost bio-sensors.",
keywords = "Amorphous oxides, Ta2O5 sensing layer, pH sensors, sputtering, ISFET, Amorphous oxides , ISFET , Ph sensors , Sensing layer , Sputtering , Ta-inf2-infO-inf5-inf",
author = "{Vaz Pinto}, Joana and Rita Branquinho and Barquinha, {Pedro Miguel C{\^a}ndido} and Alves, {Eduardo Jorge} and Martins, {Rodrigo Ferr{\~a}o de Paiva} and Fortunato, {Elvira Maria Correia}",
note = "This work was supported in part by the Portuguese Science and Technology Foundation (FCT), under Project Bloodfet PTDC/SAU-BEB/098125/2008 and under the Strategic Project PEst-C/CTM/LA0025/2011. The work of J. V. Pinto was supported by FCT-MCTES under Fellowship SFRH/BPD/44874/2008 The work of R. Branquinho was supported by INL, International Iberian Nanotechnology Laboratory, under a Ph.D. fellowship.",
year = "2013",
month = sep,
doi = "10.1109/JDT.2012.2227298",
language = "English",
volume = "9",
pages = "729--734",
journal = "Journal Of Display Technology",
issn = "1551-319X",
publisher = "IEEE Computer Society",
number = "9",
}