Examination of 1-D position sensitive detector performance through analysis of front contact heterojunction

M. Topic, F. Smole, J. Furlan, E. Fortunato, R. Martins

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The influence of different TCOs (SnO2 and ITO) on the photoelectrical properties of 1-D position sensitive detectors based on p-i-n structures was studied. A strong cross-contamination in the p-layer and contamination in the i-layer reduce the quality of the device. Numerical analysis of TCO/p-i-n structure also revealed a strong increase in defect states at the p-layer surface which can be attributed to the reduction of TCO. ITO seems to be less appropriate for a front TCO, although the spectral response of the p-i-n structure under reverse bias is not significantly affected by the conditions at the TCO/p heterojunction.

Original languageEnglish
Pages (from-to)171-176
Number of pages6
JournalMRS Proceedings
Volume420
Publication statusPublished - 1996

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