TY - JOUR
T1 - Environmental, Optical, and Electrical Stability Study of Solution-Processed Zinc-Tin-Oxide Thin-Film Transistors
AU - Nayak, Pradipta K.
AU - Vaz Pinto, Joana
AU - Gonçalves, Gonçalo
AU - Martins, Rodrigo Ferrão de Paiva
AU - Fortunato, Elvira Maria Correia
N1 - Sem PDF conforme Despacho.
Manuscript received April 30, 2011; revised June 12, 2011; accepted June 12, 2011. Date of current version October 21, 2011. This work was supported in part by the European Commission under Project INVISIBLE (ERC Grant 228144) and the Portuguese Science Foundation (FCT-MCTES) through Project ERA-NET/0005/2009, Project PTDC/SAU-BEB/098125/2008, and Project ORAMA under FP7 Grant 246334. The work of P. K. Nayak was supported by FCT-MCTES through a postdoctoral fellowship Ref. SFRH/BPD/66005/2009.
PY - 2011/12
Y1 - 2011/12
N2 - In this paper, we report the environmental, optical, and gate bias stress stability of amorphous zinc–tin–oxide (ZTO) thin-film transistors (TFTs) fabricated by sol-gel spin-coating method. The ZTO TFTs showed excellent environmental and optical stability. The threshold voltage stability of ZTO TFTs was sensitive to both positive and negative gate bias stress. Maximum threshold voltage shifting of +1.9 and -3.2 V was observed under a gate bias stress of +10 and -10 V, respectively, with no significant change to subthreshold swing value.
AB - In this paper, we report the environmental, optical, and gate bias stress stability of amorphous zinc–tin–oxide (ZTO) thin-film transistors (TFTs) fabricated by sol-gel spin-coating method. The ZTO TFTs showed excellent environmental and optical stability. The threshold voltage stability of ZTO TFTs was sensitive to both positive and negative gate bias stress. Maximum threshold voltage shifting of +1.9 and -3.2 V was observed under a gate bias stress of +10 and -10 V, respectively, with no significant change to subthreshold swing value.
KW - sol gel
KW - Amorphous metal oxide
KW - thin-film transistors (TFTs)
KW - zinc-tin-oxide (ZTO)
KW - stability
KW - Amorphous metal oxide
KW - sol gel
KW - stability
KW - thin-film transistors (TFTs)
KW - zinc-tin-oxide (ZTO)
U2 - 10.1109/JDT.2011.2160151
DO - 10.1109/JDT.2011.2160151
M3 - Article
VL - 7
SP - 640
EP - 643
JO - Journal Of Display Technology
JF - Journal Of Display Technology
SN - 1551-319X
IS - 12
ER -