Enhancement of the electrical properties of ITO deposited on polymeric substrates by using a ZnO buffer layer

Elvira Maria Correia Fortunato; A. Gonçalves; N.  Carvalho; A. Pimental; G. Lavareda Lavareda; A Marques; Rodrigo Ferrão de Paiva Martins

doi:10.1557/PROC-814-I9.8

Enhancement of the electrical properties of ITO deposited on polymeric substrates by using a ZnO buffer layer

Elvira Maria Correia Fortunato, A. Gonçalves, N. Carvalho, A. Pimental, G. Lavareda Lavareda, A Marques, Rodrigo Ferrão de Paiva Martins

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

In this paper we present the effect of the insertion of a non-doped nanocrystalline zinc oxide/buffer layer on the electrical, optical and structural properties of indium tin oxide produced at room temperature by radio frequency plasma enhanced reactive thermal evaporation on polymeric substrates. The electrical resistivity of the ITO films is reduced by more than two orders of magnitude (4.5-10(-1) to 2.9x10(-3) Omegacm). From the Hall effect measurements it is observed that the large decrease associated to the electrical resistivity, is due to the increase associated to the Hall mobility. Concerning the optical properties no effect was observed, being the transmittance in the visible and near the infra red region always higher than 80%.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Pages	231-236
Number of pages	6
Volume	814
DOIs	https://doi.org/10.1557/PROC-814-I9.8
Publication status	Published - 1 Jan 2004
Event	Symposium on Flexible Electronics-Materials and Device Technology held at the 2004 MRS Spring Meeting - Duration: 1 Jan 2004 → …

Conference

Conference	Symposium on Flexible Electronics-Materials and Device Technology held at the 2004 MRS Spring Meeting
Period	1/01/04 → …

Access to Document

10.1557/PROC-814-I9.8

Fingerprint Dive into the research topics of 'Enhancement of the electrical properties of ITO deposited on polymeric substrates by using a ZnO buffer layer'. Together they form a unique fingerprint.

Cite this

@inproceedings{6078180c30a44cfeb02e1301fd6bd836,

title = "Enhancement of the electrical properties of ITO deposited on polymeric substrates by using a ZnO buffer layer",

abstract = "In this paper we present the effect of the insertion of a non-doped nanocrystalline zinc oxide/buffer layer on the electrical, optical and structural properties of indium tin oxide produced at room temperature by radio frequency plasma enhanced reactive thermal evaporation on polymeric substrates. The electrical resistivity of the ITO films is reduced by more than two orders of magnitude (4.5-10(-1) to 2.9x10(-3) Omegacm). From the Hall effect measurements it is observed that the large decrease associated to the electrical resistivity, is due to the increase associated to the Hall mobility. Concerning the optical properties no effect was observed, being the transmittance in the visible and near the infra red region always higher than 80%.",

keywords = "Films",

author = "Fortunato, {Elvira Maria Correia} and A. Gon{\c c}alves and N. Carvalho and A. Pimental and Lavareda, {G. Lavareda} and A Marques and Martins, {Rodrigo Ferr{\~a}o de Paiva}",

year = "2004",

month = jan,

day = "1",

doi = "10.1557/PROC-814-I9.8",

language = "English",

volume = "814",

pages = "231--236",

booktitle = "Materials Research Society Symposium Proceedings",

note = "Symposium on Flexible Electronics-Materials and Device Technology held at the 2004 MRS Spring Meeting ; Conference date: 01-01-2004",

}

Fortunato, EMC, Gonçalves, A, Carvalho, N, Pimental, A, Lavareda, GL, Marques, A & Martins, RFDP 2004, Enhancement of the electrical properties of ITO deposited on polymeric substrates by using a ZnO buffer layer. in Materials Research Society Symposium Proceedings. vol. 814, pp. 231-236, Symposium on Flexible Electronics-Materials and Device Technology held at the 2004 MRS Spring Meeting, 1/01/04. https://doi.org/10.1557/PROC-814-I9.8

Enhancement of the electrical properties of ITO deposited on polymeric substrates by using a ZnO buffer layer. / Fortunato, Elvira Maria Correia; Gonçalves, A.; Carvalho, N. ; Pimental, A.; Lavareda, G. Lavareda; Marques, A; Martins, Rodrigo Ferrão de Paiva.

Materials Research Society Symposium Proceedings. Vol. 814 2004. p. 231-236.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Enhancement of the electrical properties of ITO deposited on polymeric substrates by using a ZnO buffer layer

AU - Fortunato, Elvira Maria Correia

AU - Gonçalves, A.

AU - Carvalho, N.

AU - Pimental, A.

AU - Lavareda, G. Lavareda

AU - Marques, A

AU - Martins, Rodrigo Ferrão de Paiva

PY - 2004/1/1

Y1 - 2004/1/1

N2 - In this paper we present the effect of the insertion of a non-doped nanocrystalline zinc oxide/buffer layer on the electrical, optical and structural properties of indium tin oxide produced at room temperature by radio frequency plasma enhanced reactive thermal evaporation on polymeric substrates. The electrical resistivity of the ITO films is reduced by more than two orders of magnitude (4.5-10(-1) to 2.9x10(-3) Omegacm). From the Hall effect measurements it is observed that the large decrease associated to the electrical resistivity, is due to the increase associated to the Hall mobility. Concerning the optical properties no effect was observed, being the transmittance in the visible and near the infra red region always higher than 80%.

AB - In this paper we present the effect of the insertion of a non-doped nanocrystalline zinc oxide/buffer layer on the electrical, optical and structural properties of indium tin oxide produced at room temperature by radio frequency plasma enhanced reactive thermal evaporation on polymeric substrates. The electrical resistivity of the ITO films is reduced by more than two orders of magnitude (4.5-10(-1) to 2.9x10(-3) Omegacm). From the Hall effect measurements it is observed that the large decrease associated to the electrical resistivity, is due to the increase associated to the Hall mobility. Concerning the optical properties no effect was observed, being the transmittance in the visible and near the infra red region always higher than 80%.

KW - Films

U2 - 10.1557/PROC-814-I9.8

DO - 10.1557/PROC-814-I9.8

M3 - Conference contribution

VL - 814

SP - 231

EP - 236

BT - Materials Research Society Symposium Proceedings

T2 - Symposium on Flexible Electronics-Materials and Device Technology held at the 2004 MRS Spring Meeting

Y2 - 1 January 2004

ER -