Engineering strain and conductivity of MoO 3 by ion implantation

Daniela R. Pereira, Carlos Díaz-Guerra, Marco Peres, Sérgio Magalhães, João G. Correia, José G. Marques, Ana G. Silva, Eduardo Alves, Katharina Lorenz

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

α-MoO 3 lamellar crystals are implanted with 170 keV oxygen ions at room temperature and with fluences between 1 × 10 12 cm −2 and 1 × 10 17 cm −2 , in order to modify the electrical and structural properties of the crystals. A controllable and significant increase of the electrical conductivity, over several orders of magnitude, is observed after implantation at high fluences. Based on high resolution X-ray diffraction (HRXRD) and micro-Raman spectroscopy measurements, this effect is attributed to the formation of donor-type defect complexes and new phases more conductive than the α-MoO 3 orthorhombic phase. A significant expansion of the b lattice parameter, increasing with fluence, is observed as a response to the defects created by implantation. Strain build-up occurs in several steps and in distinct depth regions within the implanted layer. Contrary to the typical values reported for other implanted oxide materials, an unusually high maximum perpendicular deformation of ∼3% is verified.

Original languageEnglish
Pages (from-to)15-27
Number of pages13
JournalActa Materialia
Volume169
DOIs
Publication statusPublished - 1 May 2019

Fingerprint

Ion implantation
Defects
Crystals
Oxides
Lattice constants
Raman spectroscopy
Structural properties
Electric properties
Ions
Oxygen
X ray diffraction
Temperature
Electric Conductivity

Keywords

  • Electrical properties
  • Implantation/irradiation
  • Molybdenum oxide
  • Raman spectroscopy
  • X-ray diffraction (XRD)

Cite this

Pereira, Daniela R. ; Díaz-Guerra, Carlos ; Peres, Marco ; Magalhães, Sérgio ; Correia, João G. ; Marques, José G. ; Silva, Ana G. ; Alves, Eduardo ; Lorenz, Katharina. / Engineering strain and conductivity of MoO 3 by ion implantation. In: Acta Materialia. 2019 ; Vol. 169. pp. 15-27.
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Pereira, DR, Díaz-Guerra, C, Peres, M, Magalhães, S, Correia, JG, Marques, JG, Silva, AG, Alves, E & Lorenz, K 2019, 'Engineering strain and conductivity of MoO 3 by ion implantation', Acta Materialia, vol. 169, pp. 15-27. https://doi.org/10.1016/j.actamat.2019.02.029

Engineering strain and conductivity of MoO 3 by ion implantation. / Pereira, Daniela R.; Díaz-Guerra, Carlos; Peres, Marco; Magalhães, Sérgio; Correia, João G.; Marques, José G.; Silva, Ana G.; Alves, Eduardo; Lorenz, Katharina.

In: Acta Materialia, Vol. 169, 01.05.2019, p. 15-27.

Research output: Contribution to journalArticle

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T1 - Engineering strain and conductivity of MoO 3 by ion implantation

AU - Pereira, Daniela R.

AU - Díaz-Guerra, Carlos

AU - Peres, Marco

AU - Magalhães, Sérgio

AU - Correia, João G.

AU - Marques, José G.

AU - Silva, Ana G.

AU - Alves, Eduardo

AU - Lorenz, Katharina

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PY - 2019/5/1

Y1 - 2019/5/1

N2 - α-MoO 3 lamellar crystals are implanted with 170 keV oxygen ions at room temperature and with fluences between 1 × 10 12 cm −2 and 1 × 10 17 cm −2 , in order to modify the electrical and structural properties of the crystals. A controllable and significant increase of the electrical conductivity, over several orders of magnitude, is observed after implantation at high fluences. Based on high resolution X-ray diffraction (HRXRD) and micro-Raman spectroscopy measurements, this effect is attributed to the formation of donor-type defect complexes and new phases more conductive than the α-MoO 3 orthorhombic phase. A significant expansion of the b lattice parameter, increasing with fluence, is observed as a response to the defects created by implantation. Strain build-up occurs in several steps and in distinct depth regions within the implanted layer. Contrary to the typical values reported for other implanted oxide materials, an unusually high maximum perpendicular deformation of ∼3% is verified.

AB - α-MoO 3 lamellar crystals are implanted with 170 keV oxygen ions at room temperature and with fluences between 1 × 10 12 cm −2 and 1 × 10 17 cm −2 , in order to modify the electrical and structural properties of the crystals. A controllable and significant increase of the electrical conductivity, over several orders of magnitude, is observed after implantation at high fluences. Based on high resolution X-ray diffraction (HRXRD) and micro-Raman spectroscopy measurements, this effect is attributed to the formation of donor-type defect complexes and new phases more conductive than the α-MoO 3 orthorhombic phase. A significant expansion of the b lattice parameter, increasing with fluence, is observed as a response to the defects created by implantation. Strain build-up occurs in several steps and in distinct depth regions within the implanted layer. Contrary to the typical values reported for other implanted oxide materials, an unusually high maximum perpendicular deformation of ∼3% is verified.

KW - Electrical properties

KW - Implantation/irradiation

KW - Molybdenum oxide

KW - Raman spectroscopy

KW - X-ray diffraction (XRD)

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