Engineering of the energy coupling in PECVD systems used to produce large area a-Si:H coatings

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Abstract

This paper deals with the engineering aspects related to the rf energy coupling in Plasma Enhanced Chemical Vapour Deposition (PECVD) processes, in a diode-type unit in which an extra grid is used. The main emphasis is given in the determination of the real power delivered to the gas and comparing it with the total power losses, besides determining the best way to control the powder formed during the process.

Original languageEnglish
Pages (from-to)1107-1108
Number of pages2
JournalVacuum
Volume45
Issue number10-11
DOIs
Publication statusPublished - 1994

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