Engineered cellulose fibers as dielectric for oxide field effect transistors

When thinking on low cost and sustainable electronic systems, paper can be considered as an interesting option to be used as substrate but also as a component of such systems. In this work we have tailored paper samples that were used simultaneously as physical support and dielectric in oxide based paper field effect transistors (FETs). It was observed that the gate leakage current in these devices depends directly from fibril's dimension and arrangement, being lower for micro/nano fibrillated cellulose paper. Moreover, extra ionic charge added to the paper during its production results in the improvement of FETs' electrical properties, with saturation mobility of 16 cm ²V ^-1s ^-1 and on/off current ratio close to 10⁵.