Energy-dependent relaxation time in quaternary amorphous oxide semiconductors probed by gated Hall effect measurements

Keyphrases

• Relaxation Time 100%
• Hall Effect Measurement 100%
• Energy-dependent 100%
• Amorphous Oxide Semiconductor 100%
• Hall Factor 100%
• Temperature Effect 50%
• Free Electrons 50%
• Conduction Band 50%
• Device Application 50%
• Field-effect Mobility 50%
• Charge Transport 50%
• Amorphous Oxides 50%
• Field-effect Transistors 50%
• Energy Dependence 50%
• Electron Transport 50%
• Solution Process 50%
• Amorphous InGaZnO (a-IGZO) 50%
• Hall Effect 50%
• Ternary Oxides 50%
• Hall Voltage 50%
• InZnO 50%
• Charge Carrier Concentration 50%
• Ionized Impurity Scattering 50%
• Scattering Center 50%

Material Science

• Oxide Compound 100%
• Oxide Semiconductor 100%
• Field Effect Transistor 50%
• Electron Transfer 50%
• Carrier Concentration 50%
• Charge Carrier 50%