TY - JOUR
T1 - Emergent solution based IGZO memristor towards neuromorphic applications
AU - Martins, Raquel Azevedo
AU - Carlos, Emanuel
AU - Deuermeier, Jonas
AU - Pereira, Maria Elias
AU - Martins, Rodrigo
AU - Fortunato, Elvira
AU - Kiazadeh, Asal
N1 - Funding Information:
info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDB%2F50025%2F2020/PT#
info:eu-repo/grantAgreement/FCT/3599-PPCDT/PTDC%2FNAN-MAT%2F30812%2F2017/PT#
Publisher Copyright:
© The Royal Society of Chemistry.
PY - 2022/2/14
Y1 - 2022/2/14
N2 - Solution-based memristors are emergent devices, due to their potential in electrical performance for neuromorphic computing combined with simple and cheap fabrication processes. However, to achieve practical application in crossbar design tens to hundreds of uniform memristors are required. Regarding this, the production step optimization should be considered as the main objective to achieve high performance devices. In this work, solution-based indium gallium zinc oxide (IGZO) memristor devices are produced using a combustion synthesis process. The performance of the device is optimized by using different annealing temperatures and active layer thicknesses to reach a higher reproducibility and stability. All IGZO memristors show a low operating voltage, good endurance, and retention up to 105 s under air conditions. The optimized devices can be programmed in a multi-level cell operation mode, with 8 different resistive states. Also, preliminary results reveal synaptic behavior by replicating the plasticity of a synaptic junction through potentiation and depression; this is a significant step towards low-cost processes and large-scale compatibility of neuromorphic computing systems. This journal is
AB - Solution-based memristors are emergent devices, due to their potential in electrical performance for neuromorphic computing combined with simple and cheap fabrication processes. However, to achieve practical application in crossbar design tens to hundreds of uniform memristors are required. Regarding this, the production step optimization should be considered as the main objective to achieve high performance devices. In this work, solution-based indium gallium zinc oxide (IGZO) memristor devices are produced using a combustion synthesis process. The performance of the device is optimized by using different annealing temperatures and active layer thicknesses to reach a higher reproducibility and stability. All IGZO memristors show a low operating voltage, good endurance, and retention up to 105 s under air conditions. The optimized devices can be programmed in a multi-level cell operation mode, with 8 different resistive states. Also, preliminary results reveal synaptic behavior by replicating the plasticity of a synaptic junction through potentiation and depression; this is a significant step towards low-cost processes and large-scale compatibility of neuromorphic computing systems. This journal is
UR - http://www.scopus.com/inward/record.url?scp=85124656584&partnerID=8YFLogxK
U2 - 10.1039/d1tc05465a
DO - 10.1039/d1tc05465a
M3 - Article
AN - SCOPUS:85124656584
SN - 2050-7534
VL - 10
SP - 1991
EP - 1998
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
IS - 6
ER -