Electrospun Highly Aligned IGZO Nanofiber Arrays with Low-Thermal-Budget for Challenging Transistor and Integrated Electronics

Bo He, Gang He, Li Zhu, Jingbiao Cui, Elvira Fortunato, Rodrigo Martins

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Metal oxide field-effect transistors (MOFETs) represent a promising technology for applications in existing but alsoemerging large-area electronics. Simultaneously, the rise of 1D nanomaterials with unique properties, represented by nanofibers (NFs), has also energized research. Thus, developing 1D nanofiber networks (NFNs) to act as the potential building blocks for use in fundamental elements of transistors is considered to be a promising approach torealize high-performance 1D electronics. However, high processing temperatures and disordered nanofiber distribution represent two remaining technical challenges. Here, electrospun highly aligned IGZO (a-IGZO) nanofiber arrays with low-thermal-budget of 350 °C and impressive device characteristics are achieved, including a μFE of 5.63 cm2 V–1 s–1 and superior on/off current ratio of ≈107. When ALD-derived high-k HfAlOx thin films are employed as gate dielectrics, the source/drain voltage (VDS) can be substantially reduced by ten times to a range of only 03 V, along with a three times improvement in mobility to a respectable value of 15.9 cm2 V–1 s–1. Successful integrations of logic operation, sensor, and flexible devices implies the potential prospect of a-IGZO NFN FETs in multifunctional electronics. The strategy for combining cryogenic processes and parallel arrays provides a feasible and reliable route in building future low-power, high-performance flexible electronics.
Original languageEnglish
Article number2310264
Number of pages12
JournalAdvanced Functional Materials
Issue number6
Early online date27 Oct 2023
Publication statusPublished - 5 Feb 2024


  • aligned
  • electrospinning
  • field-effect transistors
  • IGZO nanofibers
  • integrated electronics


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