Electronic structure of amorphous ZnO films

Elvira Maria Correia Fortunato; Pedro Miguel Cândido Barquinha; Rodrigo Ferrão de Paiva Martins; Luis Miguel Nunes Pereira

doi:10.1002/pssc.201400010

Electronic structure of amorphous ZnO films

Elvira Maria Correia Fortunato, Pedro Miguel Cândido Barquinha, Rodrigo Ferrão de Paiva Martins, Luis Miguel Nunes Pereira

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

18 Citations (Scopus)

Abstract

We use resonant photoemission spectroscopy (resPES) to study the electronic properties of amorphous ZnO (a-ZnO) layers. We report on the core levels, the valence band (VB) PES data, and the X-ray absorption (XAS) data which we use for the conduction band (CB) density of states. From these results we are able to derive the partial density of states (pDOS) of O2p and Zn4s4p states in the VB and CB, respectively as well as a band scheme. At the O1s resonance we observe a band of localized defect states which is located between the Fermi energy and the CBM. At the Zn2p edge the XAS data indicate that localized Zn4s4p states are involved in the DOS starting already at the Fermi energy.

Original language	Unknown
Title of host publication	Physica Status Solidi C-Current Topics in Solid State Physics
Pages	1476-1480
DOIs	https://doi.org/10.1002/pssc.201400010
Publication status	Published - 1 Jan 2014
Event	Fall Meeting Symposium on Novel Materials for Electronic, Optoelectronic, Photovoltaic and Energy Saving Applications (E-MRS) - Duration: 1 Jan 2013 → …

Conference

Conference	Fall Meeting Symposium on Novel Materials for Electronic, Optoelectronic, Photovoltaic and Energy Saving Applications (E-MRS)
Period	1/01/13 → …

Access to Document

10.1002/pssc.201400010

Cite this

@inproceedings{9d185344c88f44969dce92bf3368bb39,

title = "Electronic structure of amorphous ZnO films",

abstract = "We use resonant photoemission spectroscopy (resPES) to study the electronic properties of amorphous ZnO (a-ZnO) layers. We report on the core levels, the valence band (VB) PES data, and the X-ray absorption (XAS) data which we use for the conduction band (CB) density of states. From these results we are able to derive the partial density of states (pDOS) of O2p and Zn4s4p states in the VB and CB, respectively as well as a band scheme. At the O1s resonance we observe a band of localized defect states which is located between the Fermi energy and the CBM. At the Zn2p edge the XAS data indicate that localized Zn4s4p states are involved in the DOS starting already at the Fermi energy.",

keywords = "resonant PES, a-ZnO thin films, intrinsic defects, charge transfer, AOS, TCO",

author = "Fortunato, {Elvira Maria Correia} and Barquinha, {Pedro Miguel C{\^a}ndido} and Martins, {Rodrigo Ferr{\~a}o de Paiva} and Pereira, {Luis Miguel Nunes}",

year = "2014",

month = jan,

day = "1",

doi = "10.1002/pssc.201400010",

language = "Unknown",

pages = "1476--1480",

booktitle = "Physica Status Solidi C-Current Topics in Solid State Physics",

note = "Fall Meeting Symposium on Novel Materials for Electronic, Optoelectronic, Photovoltaic and Energy Saving Applications (E-MRS) ; Conference date: 01-01-2013",

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TY - GEN

T1 - Electronic structure of amorphous ZnO films

AU - Fortunato, Elvira Maria Correia

AU - Barquinha, Pedro Miguel Cândido

AU - Martins, Rodrigo Ferrão de Paiva

AU - Pereira, Luis Miguel Nunes

PY - 2014/1/1

Y1 - 2014/1/1

N2 - We use resonant photoemission spectroscopy (resPES) to study the electronic properties of amorphous ZnO (a-ZnO) layers. We report on the core levels, the valence band (VB) PES data, and the X-ray absorption (XAS) data which we use for the conduction band (CB) density of states. From these results we are able to derive the partial density of states (pDOS) of O2p and Zn4s4p states in the VB and CB, respectively as well as a band scheme. At the O1s resonance we observe a band of localized defect states which is located between the Fermi energy and the CBM. At the Zn2p edge the XAS data indicate that localized Zn4s4p states are involved in the DOS starting already at the Fermi energy.

AB - We use resonant photoemission spectroscopy (resPES) to study the electronic properties of amorphous ZnO (a-ZnO) layers. We report on the core levels, the valence band (VB) PES data, and the X-ray absorption (XAS) data which we use for the conduction band (CB) density of states. From these results we are able to derive the partial density of states (pDOS) of O2p and Zn4s4p states in the VB and CB, respectively as well as a band scheme. At the O1s resonance we observe a band of localized defect states which is located between the Fermi energy and the CBM. At the Zn2p edge the XAS data indicate that localized Zn4s4p states are involved in the DOS starting already at the Fermi energy.

KW - resonant PES

KW - a-ZnO thin films

KW - intrinsic defects

KW - charge transfer

KW - AOS

KW - TCO

U2 - 10.1002/pssc.201400010

DO - 10.1002/pssc.201400010

M3 - Conference contribution

SP - 1476

EP - 1480

BT - Physica Status Solidi C-Current Topics in Solid State Physics

T2 - Fall Meeting Symposium on Novel Materials for Electronic, Optoelectronic, Photovoltaic and Energy Saving Applications (E-MRS)

Y2 - 1 January 2013

ER -