We use resonant photoemission spectroscopy (resPES) to study the electronic properties of amorphous ZnO (a-ZnO) layers. We report on the core levels, the valence band (VB) PES data, and the X-ray absorption (XAS) data which we use for the conduction band (CB) density of states. From these results we are able to derive the partial density of states (pDOS) of O2p and Zn4s4p states in the VB and CB, respectively as well as a band scheme. At the O1s resonance we observe a band of localized defect states which is located between the Fermi energy and the CBM. At the Zn2p edge the XAS data indicate that localized Zn4s4p states are involved in the DOS starting already at the Fermi energy.
|Title of host publication||Physica Status Solidi C-Current Topics in Solid State Physics|
|Publication status||Published - 1 Jan 2014|
|Event||Fall Meeting Symposium on Novel Materials for Electronic, Optoelectronic, Photovoltaic and Energy Saving Applications (E-MRS) - |
Duration: 1 Jan 2013 → …
|Conference||Fall Meeting Symposium on Novel Materials for Electronic, Optoelectronic, Photovoltaic and Energy Saving Applications (E-MRS)|
|Period||1/01/13 → …|