ELECTRONIC SEMICONDUCTOR DEVICE BASED ON COPPER NICKEL AND GALLIUM-TIN-ZINC-COPPER-TITANIUM P AND N-TYPE OXIDES, THEIR APPLICATIONS AND CORRESPONDING MANUFACTURE PROCESS

Research output: PatentRegional/Other National Application

Abstract

The present invention corresponds to the use of p and n-type oxide semiconductors based on copper nickel (OCux Niy , with 0OC and their applications in optoelectronic and electronic fields is to manufacture devices, such as, Complementary-Metal-Oxide-Semiconductors, thin film transistors, pn heterojunctions, logic gates, O-ring oscillators, using as substrate glass, metal foils, polymers or cellulose materials, in which a protection layer based on magnesium fluoride is used, together with a tantalum oxide matching layer of the active semiconductors to a dielectric, such as, silicon dioxide.
Original languageEnglish
Patent numberCA2677312
IPCH01L 21/ 363 A I
Priority date5/02/07
Filing date5/08/08
Publication statusPublished - 14 Aug 2008

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