Electronic semiconductor device based on copper nickel and gallium-tin-zinc-copper-titanium p and n-type oxides, their applications and corresponding manufacture process

Elvira Maria Correia Fortunato; Rodrigo Ferrão de Paiva Martins

Electronic semiconductor device based on copper nickel and gallium-tin-zinc-copper-titanium p and n-type oxides, their applications and corresponding manufacture process

Elvira Maria Correia Fortunato (Inventor), Rodrigo Ferrão de Paiva Martins (Inventor)

Research output: Patent › Regional/Other National Application

Original language	Japanese
Patent number	JP2010518619
IPC	H01L 33/ 28 A I
Priority date	5/02/07
Filing date	5/08/08
Publication status	Published - 27 May 2010

Cite this

@misc{152d41557b924f238a823bba2f003c08,

title = "Electronic semiconductor device based on copper nickel and gallium-tin-zinc-copper-titanium p and n-type oxides, their applications and corresponding manufacture process",

author = "Fortunato, {Elvira Maria Correia} and Martins, {Rodrigo Ferr{\~a}o de Paiva}",

year = "2010",

month = may,

day = "27",

language = "Japanese",

type = "Patent",

note = "JP2010518619; H01L 33/ 28 A I",

}

TY - PAT

T1 - Electronic semiconductor device based on copper nickel and gallium-tin-zinc-copper-titanium p and n-type oxides, their applications and corresponding manufacture process

AU - Fortunato, Elvira Maria Correia

AU - Martins, Rodrigo Ferrão de Paiva

PY - 2010/5/27

Y1 - 2010/5/27

M3 - Regional/Other National Application

M1 - JP2010518619

Y2 - 2008/08/05

ER -