TY - PAT
T1 - Electronic semiconductor device based on copper nickel and gallium-tin-zinc-copper-titanium p and n-type oxides, their applications and corresponding manufacture process
AU - Fortunato, Elvira Maria Correia
AU - Martins, Rodrigo Ferrão De Paiva
PY - 2008/8/14
Y1 - 2008/8/14
N2 - The present invention corresponds to the use of p and n-type oxide semiconductors based on copper nickel (OCux Niy , with 0C and their applications in optoelectronic and electronic fields is to manufacture devices, such as, Complementary-Metal-Oxide-Semiconductors, thin film transistors, pn heterojunctions, logic gates, O-ring oscillators, using as substrate glass, metal foils, polymers or cellulose materials, in which a protection layer based on magnesium fluoride is used, together with a tantalum oxide matching layer of the active semiconductors to a dielectric, such as, silicon dioxide.
AB - The present invention corresponds to the use of p and n-type oxide semiconductors based on copper nickel (OCux Niy , with 0C and their applications in optoelectronic and electronic fields is to manufacture devices, such as, Complementary-Metal-Oxide-Semiconductors, thin film transistors, pn heterojunctions, logic gates, O-ring oscillators, using as substrate glass, metal foils, polymers or cellulose materials, in which a protection layer based on magnesium fluoride is used, together with a tantalum oxide matching layer of the active semiconductors to a dielectric, such as, silicon dioxide.
M3 - International PCT application
M1 - WO2008097117
Y2 - 2007/02/05
ER -