TY - JOUR
T1 - Electron transport in single and multicomponent n-type oxide semiconductors
AU - Martins, Rodrigo Ferrão de Paiva
AU - Barquinha, Pedro Miguel Cândido
AU - Pimentel, Ana Cláudia Madeira Botas Gomes
AU - Pereira, Luis Miguel Nunes
AU - Fortunato, E.
AU - Kang, D.
AU - Song, I.
AU - Kim, C.
AU - Park, J.
AU - Park, Y.
PY - 2008/2/15
Y1 - 2008/2/15
N2 - The electron transport in n-type polycrystalline zinc oxide, nanocrystalline Zinc-Gallium–Oxygen and amorphous Indium–Zinc–Oxygen systems produced by rf magnetron sputtering at room temperature, under different oxygen partial pressure were investigated. It was found that the carrier transport is not band tail limited, being governed by metal cations irrespective to the film's structure. The highest net room temperature electron mobility was achieved on the amorphous films and noticed that for the single component oxides the mobility decreases as the carrier concentration increases, while the reverse behaviour was observed for the multicomponent oxides, independently of their structure. These behaviours are related to the role that negative charge defects in excess of 1010 cm− 2 generated on multicomponent oxides have on carriers scattering and so on their electronic performances.
AB - The electron transport in n-type polycrystalline zinc oxide, nanocrystalline Zinc-Gallium–Oxygen and amorphous Indium–Zinc–Oxygen systems produced by rf magnetron sputtering at room temperature, under different oxygen partial pressure were investigated. It was found that the carrier transport is not band tail limited, being governed by metal cations irrespective to the film's structure. The highest net room temperature electron mobility was achieved on the amorphous films and noticed that for the single component oxides the mobility decreases as the carrier concentration increases, while the reverse behaviour was observed for the multicomponent oxides, independently of their structure. These behaviours are related to the role that negative charge defects in excess of 1010 cm− 2 generated on multicomponent oxides have on carriers scattering and so on their electronic performances.
KW - Oxides
KW - Conductivity
KW - Nanostructures
KW - Electrical properties
KW - Order and disorder semiconductors
U2 - 10.1016/j.tsf.2007.03.158
DO - 10.1016/j.tsf.2007.03.158
M3 - Article
SN - 0040-6090
VL - 516
SP - 1322
EP - 1325
JO - Thin Solid Films
JF - Thin Solid Films
IS - 7
ER -