The motivation of using metal oxides is mainly due to its charge storage capabilities, and electrocatalytic, electrochromic and photoelectrochemical properties. But comparing with bulk, nanostructured materials present several advantages related with the spatial confinement, large fraction of surface atoms, high surface energy, strong surface adsorption and increased surface to volume ratio, which greatly improves the performances of these materials. The deposition of this materials can be accomplished by a variety of physical and chemical techniques but nowadays, electrodeposited metal oxides are generally used in both laboratories and industries due to the flexibility to control structure and morphology of the oxide electrodes combined with a reduced cost. Tungsten oxide (WO3) is a well-studied semiconductor and is used for several applications as chromogenic material, sensor and catalyst. The major important features is its low cost and availability, improved stability, easy morphologic and structural control of the nanostructures, reversible change of conductivity, high sensitivity, selectivity and biocompatibility. For the electrodeposition of WO3, more than one method can be adopted: electrodeposition from a precursor solution, anodic oxidation, and electrodeposition of already produced nanoparticles; however, in this case the mechanism of the electrodeposition is not fully understood. In this chapter, a review of the latest published work of electrodeposited nanostructured metal oxides is provided to the reader, with a more detailed explanation of WO3 material applied in sensing devices.
Original languageEnglish
Title of host publicationElectroplating of Nanostructures
EditorsMahmood Aliofkhazraei
ISBN (Electronic)978-953-51-2213-5
ISBN (Print)978-953-51-2213-5
Publication statusPublished - 2 Dec 2015


  • tungsten oxide
  • pH sensor
  • neural recordings
  • impedance


Dive into the research topics of 'Electrodeposition of WO3 Nanoparticles for Sensing Applications'. Together they form a unique fingerprint.

Cite this