Electrochromic thin film transistors with lateral or vertical structure using functionalized or non-functionalized substrates and method of manufacturing same

The present invention consists in the creation and manufacture of electrochromic thin film transistors, either self-sustaining or not, with lateral or vertical structure, deposited on any kind of functionalized substrate (1), referred to as electrochromic substrate, or non-functionalized substrate, and wherein the electrolyte material (3) and the presence or not of an ultra-thin membrane (7) act as dielectric elements, the electrochromic material (2) acts as active semiconductor of the channel region, and wherein the gate (4), source (5) and drain (5) electrodes are based on metal materials, such as Titanium, Gold, Aluminium, or degenerate semiconductive oxides, like Indium and Zinc oxide, Gallium-doped Zinc oxide, characterized in that the device operation control process is made by means of electronic and ionic current, and the off-state to on-state switch, or vice-versa, is followed by a changes of colour of the device.