TY - GEN
T1 - Electrochemical transistor based on tungsten oxide with optoelectronic properties
AU - Grey, Paul
AU - Pereira, Luis Miguel Nunes
AU - Pereira, Sónia
AU - Barquinha, Pedro Miguel Cândido
AU - Cunha, Inês
AU - Martins, Rodrigo Ferrão de Paiva
AU - Fortunato, Elvira Maria Correia
N1 - This work was supported by the FCT - Portuguese Foundation for Science and Technology, by the project EXCL/CTM-NAN/0201/2012 and by FEDER funds through the COMPETE 2020 Programme and National Funds through FCT under the project UID/CTM/50025/2013. The work was also supported by FP7 APPLE (grant number 262782-2) and SMART EC (grant number 258203) projects.
PY - 2016
Y1 - 2016
N2 - This paper reports the integration of an electrochromic inorganic oxide semiconductor (WO3) into an electrolyte gated transistor device. The resulting electrochromic transistor (EC-T) is a novel optoelectronic device, exhibiting simultaneous optical and electrical modulation. These devices show an On- Off ratio of 5×106and a transconductance (gm) of 3.59 mS, for gate voltages (VG) between −2 and 2 V, which, to the authors knowledge, are one of the best values ever reported for this type of electrochemical transistors. The simple and low-cost processing together with the electrical/optical performances, well supported into a comprehensive analysis of device physics, opens doors for a wide range of new applications in display technologies, biosensors, fuel cells or electrochemical logic circuits.
AB - This paper reports the integration of an electrochromic inorganic oxide semiconductor (WO3) into an electrolyte gated transistor device. The resulting electrochromic transistor (EC-T) is a novel optoelectronic device, exhibiting simultaneous optical and electrical modulation. These devices show an On- Off ratio of 5×106and a transconductance (gm) of 3.59 mS, for gate voltages (VG) between −2 and 2 V, which, to the authors knowledge, are one of the best values ever reported for this type of electrochemical transistors. The simple and low-cost processing together with the electrical/optical performances, well supported into a comprehensive analysis of device physics, opens doors for a wide range of new applications in display technologies, biosensors, fuel cells or electrochemical logic circuits.
KW - Electrochromism
KW - Electrolytegated transistors
KW - Polymer electrolytes
KW - Thin films
KW - Tungsten oxides (VI)
UR - http://www.scopus.com/inward/record.url?scp=84962076654&partnerID=8YFLogxK
U2 - 10.1007/978-3-319-31165-4_51
DO - 10.1007/978-3-319-31165-4_51
M3 - Conference contribution
AN - SCOPUS:84962076654
SN - 978-3-319-31164-7
T3 - IFIP Advances in Information and Communication Technology
SP - 542
EP - 550
BT - Technological Innovation for Cyber-Physical Systems: Proceedings of the 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2016
A2 - Camarinha-Matos, L. M.
A2 - Falcão, A.
A2 - Vafaei, N.
A2 - Najdi , S.
PB - Springer
CY - Cham
T2 - 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2016
Y2 - 11 April 2016 through 13 April 2016
ER -