Abstract

This paper reports the integration of an electrochromic inorganic oxide semiconductor (WO3) into an electrolyte gated transistor device. The resulting electrochromic transistor (EC-T) is a novel optoelectronic device, exhibiting simultaneous optical and electrical modulation. These devices show an On- Off ratio of 5×106and a transconductance (gm) of 3.59 mS, for gate voltages (VG) between −2 and 2 V, which, to the authors knowledge, are one of the best values ever reported for this type of electrochemical transistors. The simple and low-cost processing together with the electrical/optical performances, well supported into a comprehensive analysis of device physics, opens doors for a wide range of new applications in display technologies, biosensors, fuel cells or electrochemical logic circuits.

Original languageEnglish
Title of host publicationTechnological Innovation for Cyber-Physical Systems: Proceedings of the 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2016
EditorsL. M. Camarinha-Matos, A. Falcão, N. Vafaei, S. Najdi
Place of PublicationCham
PublisherSpringer
Pages542-550
Number of pages9
ISBN (Electronic)978-3-319-31165-4
ISBN (Print)978-3-319-31164-7
DOIs
Publication statusPublished - 2016
Event7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2016 - Costa de Caparica, Portugal
Duration: 11 Apr 201613 Apr 2016

Publication series

NameIFIP Advances in Information and Communication Technology
PublisherSpringer
Volume470
ISSN (Print)1868-4238

Conference

Conference7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2016
CountryPortugal
CityCosta de Caparica
Period11/04/1613/04/16

Keywords

  • Electrochromism
  • Electrolytegated transistors
  • Polymer electrolytes
  • Thin films
  • Tungsten oxides (VI)

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