Electrical conductivity of as-grown and oxidized MgO: Li crystals implanted with Li ions

M. M. Tardío; Rafael Ramı́rez; Roberto Gonzalez González; Joana Vaz Pinto; Rui C. da Silva

doi:10.1016/j.nimb.2003.12.063

Electrical conductivity of as-grown and oxidized MgO: Li crystals implanted with Li ions

M. M. Tardío, Rafael Ramı́rez, Roberto Gonzalez González, Joana Vaz Pinto, Rui C. da Silva

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Citations (Scopus)

Abstract

Alternating and direct current electrical measurements between 293 and 450 K were used to characterize the electrical conductivity of the implanted region in as-grown and oxidized MgO:Li single crystals. Both types of crystals were implanted with Li(+) ions with art energy of 175 keV and a fluence of 1 x 10(17) ions/cm(2). The electrical conductivity of the implanted regions was approximate to14 and 7 orders of magnitude higher than that of the unimplanted areas, respectively. Electrical measurements at different temperatures of the implanted regions suggest thermally activated processes with activation energies of about 0.14 and 0.06 eV in as-grown and oxidized samples, respectively. In both type of crystals, the I-V characteristics reveal that the contacts are ohmic, in contrast to blocking contacts in unimplanted crystals. The enhancement in conductivity observed in the implanted region is associated with the intrinsic defects created by the implantation, rather than with the implanted Li ions. The differences in both conductivity and activation energy relative to undoped crystals are likely due to free carriers already present in different concentrations in as-grown and oxidized MgO:Li crystals before implantation.

Original language	English
Title of host publication	Proceedings of the Twelfth International Conference on Radiation Effects in Insulators (REI-12)
Editors	L. Amaral , M. Behar , F. C. Zawislak
Place of Publication	Amsterdam
Publisher	ELSEVIER SCIENCE BV
Pages	164-169
DOIs	https://doi.org/10.1016/j.nimb.2003.12.063
Publication status	Published - Jun 2004
Event	12th International Conference on Radiation Effects in Insulators (REI-12) - Gramado, Brazil Duration: 31 Aug 2003 → 5 Sept 2003 Conference number: 12th

Publication series

Name	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Publisher	Elsevier Science B.V.
Number	1-4 June
Volume	218
ISSN (Print)	0168-583X

Conference

Conference	12th International Conference on Radiation Effects in Insulators (REI-12)
Country/Territory	Brazil
City	Gramado
Period	31/08/03 → 5/09/03

Keywords

Defects
Electrical conductivity
Ion implantation
MgO

Access to Document

10.1016/j.nimb.2003.12.063Licence: Unspecified

Cite this

Tardío, M. M., Ramı́rez, R., González, R. G., Vaz Pinto, J., & Silva, R. C. D. (2004). Electrical conductivity of as-grown and oxidized MgO: Li crystals implanted with Li ions. In L. Amaral , M. Behar , & F. C. Zawislak (Eds.), Proceedings of the Twelfth International Conference on Radiation Effects in Insulators (REI-12) (pp. 164-169). (Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms; Vol. 218, No. 1-4 June). ELSEVIER SCIENCE BV. https://doi.org/10.1016/j.nimb.2003.12.063

Tardío, M. M. ; Ramı́rez, Rafael ; González, Roberto Gonzalez et al. / Electrical conductivity of as-grown and oxidized MgO : Li crystals implanted with Li ions. Proceedings of the Twelfth International Conference on Radiation Effects in Insulators (REI-12). editor / L. Amaral ; M. Behar ; F. C. Zawislak . Amsterdam : ELSEVIER SCIENCE BV, 2004. pp. 164-169 (Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms; 1-4 June).

@inproceedings{32c56bde2327467ea47af5d395741bde,

title = "Electrical conductivity of as-grown and oxidized MgO: Li crystals implanted with Li ions",

abstract = "Alternating and direct current electrical measurements between 293 and 450 K were used to characterize the electrical conductivity of the implanted region in as-grown and oxidized MgO:Li single crystals. Both types of crystals were implanted with Li(+) ions with art energy of 175 keV and a fluence of 1 x 10(17) ions/cm(2). The electrical conductivity of the implanted regions was approximate to14 and 7 orders of magnitude higher than that of the unimplanted areas, respectively. Electrical measurements at different temperatures of the implanted regions suggest thermally activated processes with activation energies of about 0.14 and 0.06 eV in as-grown and oxidized samples, respectively. In both type of crystals, the I-V characteristics reveal that the contacts are ohmic, in contrast to blocking contacts in unimplanted crystals. The enhancement in conductivity observed in the implanted region is associated with the intrinsic defects created by the implantation, rather than with the implanted Li ions. The differences in both conductivity and activation energy relative to undoped crystals are likely due to free carriers already present in different concentrations in as-grown and oxidized MgO:Li crystals before implantation.",

keywords = "Defects , Electrical conductivity , Ion implantation , MgO",

author = "Tard{\'i}o, {M. M.} and Rafael Ram{\'ı}rez and Gonz{\'a}lez, {Roberto Gonzalez} and {Vaz Pinto}, Joana and Silva, {Rui C. da}",

note = "Sem PDF. We acknowledge with thanks the Portuguese–Spanish Bilateral Research Collaboration Grant. Research at the University Carlos III was supported by the CICYT of Spain under project MAT2002-01870. The research of Y.C. is an outgrowth of past investigations performed at the Solid State Division of the Oak Ridge National Laboratory. Research at ITN was partially supported by the CRUP of Portugal under contract AI-E-43/01.; 12th International Conference on Radiation Effects in Insulators (REI-12) ; Conference date: 31-08-2003 Through 05-09-2003",

year = "2004",

month = jun,

doi = "10.1016/j.nimb.2003.12.063",

language = "English",

series = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

publisher = "ELSEVIER SCIENCE BV",

number = "1-4 June",

pages = "164--169",

editor = "{Amaral }, L. and {Behar }, M. and {Zawislak }, {F. C.}",

booktitle = "Proceedings of the Twelfth International Conference on Radiation Effects in Insulators (REI-12)",

}

Tardío, MM, Ramı́rez, R, González, RG, Vaz Pinto, J & Silva, RCD 2004, Electrical conductivity of as-grown and oxidized MgO: Li crystals implanted with Li ions. in L Amaral , M Behar & FC Zawislak (eds), Proceedings of the Twelfth International Conference on Radiation Effects in Insulators (REI-12). Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, no. 1-4 June, vol. 218, ELSEVIER SCIENCE BV, Amsterdam, pp. 164-169, 12th International Conference on Radiation Effects in Insulators (REI-12), Gramado, Brazil, 31/08/03. https://doi.org/10.1016/j.nimb.2003.12.063

Electrical conductivity of as-grown and oxidized MgO: Li crystals implanted with Li ions. / Tardío, M. M.; Ramı́rez, Rafael; González, Roberto Gonzalez et al.
Proceedings of the Twelfth International Conference on Radiation Effects in Insulators (REI-12). ed. / L. Amaral ; M. Behar ; F. C. Zawislak . Amsterdam: ELSEVIER SCIENCE BV, 2004. p. 164-169 (Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms; Vol. 218, No. 1-4 June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Electrical conductivity of as-grown and oxidized MgO

T2 - 12th International Conference on Radiation Effects in Insulators (REI-12)

AU - Tardío, M. M.

AU - Ramı́rez, Rafael

AU - González, Roberto Gonzalez

AU - Vaz Pinto, Joana

AU - Silva, Rui C. da

N1 - Conference code: 12th

PY - 2004/6

Y1 - 2004/6

N2 - Alternating and direct current electrical measurements between 293 and 450 K were used to characterize the electrical conductivity of the implanted region in as-grown and oxidized MgO:Li single crystals. Both types of crystals were implanted with Li(+) ions with art energy of 175 keV and a fluence of 1 x 10(17) ions/cm(2). The electrical conductivity of the implanted regions was approximate to14 and 7 orders of magnitude higher than that of the unimplanted areas, respectively. Electrical measurements at different temperatures of the implanted regions suggest thermally activated processes with activation energies of about 0.14 and 0.06 eV in as-grown and oxidized samples, respectively. In both type of crystals, the I-V characteristics reveal that the contacts are ohmic, in contrast to blocking contacts in unimplanted crystals. The enhancement in conductivity observed in the implanted region is associated with the intrinsic defects created by the implantation, rather than with the implanted Li ions. The differences in both conductivity and activation energy relative to undoped crystals are likely due to free carriers already present in different concentrations in as-grown and oxidized MgO:Li crystals before implantation.

AB - Alternating and direct current electrical measurements between 293 and 450 K were used to characterize the electrical conductivity of the implanted region in as-grown and oxidized MgO:Li single crystals. Both types of crystals were implanted with Li(+) ions with art energy of 175 keV and a fluence of 1 x 10(17) ions/cm(2). The electrical conductivity of the implanted regions was approximate to14 and 7 orders of magnitude higher than that of the unimplanted areas, respectively. Electrical measurements at different temperatures of the implanted regions suggest thermally activated processes with activation energies of about 0.14 and 0.06 eV in as-grown and oxidized samples, respectively. In both type of crystals, the I-V characteristics reveal that the contacts are ohmic, in contrast to blocking contacts in unimplanted crystals. The enhancement in conductivity observed in the implanted region is associated with the intrinsic defects created by the implantation, rather than with the implanted Li ions. The differences in both conductivity and activation energy relative to undoped crystals are likely due to free carriers already present in different concentrations in as-grown and oxidized MgO:Li crystals before implantation.

KW - Defects

KW - Electrical conductivity

KW - Ion implantation

KW - MgO

U2 - 10.1016/j.nimb.2003.12.063

DO - 10.1016/j.nimb.2003.12.063

M3 - Conference contribution

T3 - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SP - 164

EP - 169

BT - Proceedings of the Twelfth International Conference on Radiation Effects in Insulators (REI-12)

A2 - Amaral , L.

A2 - Behar , M.

A2 - Zawislak , F. C.

PB - ELSEVIER SCIENCE BV

CY - Amsterdam

Y2 - 31 August 2003 through 5 September 2003

ER -

Tardío MM, Ramı́rez R, González RG, Vaz Pinto J, Silva RCD. Electrical conductivity of as-grown and oxidized MgO: Li crystals implanted with Li ions. In Amaral L, Behar M, Zawislak FC, editors, Proceedings of the Twelfth International Conference on Radiation Effects in Insulators (REI-12). Amsterdam: ELSEVIER SCIENCE BV. 2004. p. 164-169. (Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms; 1-4 June). doi: 10.1016/j.nimb.2003.12.063

Electrical conductivity of as-grown and oxidized MgO: Li crystals implanted with Li ions

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