Electrical characterization of molybdenum oxide lamellar crystals irradiated with UV light and proton beams

D. R. Pereira; M. Peres; L. C. Alves; J. G. Correia; C. Díaz-Guerra; A. G. Silva; E. Alves; K. Lorenz

doi:10.1016/j.surfcoat.2018.01.034

Electrical characterization of molybdenum oxide lamellar crystals irradiated with UV light and proton beams

D. R. Pereira, M. Peres, L. C. Alves, J. G. Correia, C. Díaz-Guerra, A. G. Silva, E. Alves, K. Lorenz

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

MoO₃ lamellar single crystals were processed into planar metal-semiconductor-metal devices and subjected to irradiation cycles with ultraviolet light and 2 MeV protons in vacuum. In-situ electrical characterization demonstrates that these sensor devices respond well to the radiation with a gain of ~30% upon proton irradiation. However, response times are slow and strong persistent photoconductivity and ion beam induced conductivity are observed when the excitation source is switched off. The current decay is strongly increased when the irradiation chamber is vented with air suggesting that surface processes are at the origin of persistent conductivity. The observed conductivity changes are explained based on a model considering the creation of electron-hole pairs as well as adsorption and desorption processes of oxygen molecules at the surface of the samples.

Original language	English
Pages (from-to)	50-54
Number of pages	5
Journal	Surface and Coatings Technology
Volume	355
DOIs	https://doi.org/10.1016/j.surfcoat.2018.01.034
Publication status	Published - 15 Dec 2018

Keywords

Ion beam induced conductivity
Molybdenum trioxide
Photoconductivity

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title = "Electrical characterization of molybdenum oxide lamellar crystals irradiated with UV light and proton beams",

abstract = "MoO3 lamellar single crystals were processed into planar metal-semiconductor-metal devices and subjected to irradiation cycles with ultraviolet light and 2 MeV protons in vacuum. In-situ electrical characterization demonstrates that these sensor devices respond well to the radiation with a gain of ~30% upon proton irradiation. However, response times are slow and strong persistent photoconductivity and ion beam induced conductivity are observed when the excitation source is switched off. The current decay is strongly increased when the irradiation chamber is vented with air suggesting that surface processes are at the origin of persistent conductivity. The observed conductivity changes are explained based on a model considering the creation of electron-hole pairs as well as adsorption and desorption processes of oxygen molecules at the surface of the samples.",

keywords = "Ion beam induced conductivity, Molybdenum trioxide, Photoconductivity",

author = "Pereira, {D. R.} and M. Peres and Alves, {L. C.} and Correia, {J. G.} and C. D{\'i}az-Guerra and Silva, {A. G.} and E. Alves and K. Lorenz",

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year = "2018",

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doi = "10.1016/j.surfcoat.2018.01.034",

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T1 - Electrical characterization of molybdenum oxide lamellar crystals irradiated with UV light and proton beams

AU - Pereira, D. R.

AU - Peres, M.

AU - Alves, L. C.

AU - Correia, J. G.

AU - Díaz-Guerra, C.

AU - Silva, A. G.

AU - Alves, E.

AU - Lorenz, K.

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PY - 2018/12/15

Y1 - 2018/12/15

N2 - MoO3 lamellar single crystals were processed into planar metal-semiconductor-metal devices and subjected to irradiation cycles with ultraviolet light and 2 MeV protons in vacuum. In-situ electrical characterization demonstrates that these sensor devices respond well to the radiation with a gain of ~30% upon proton irradiation. However, response times are slow and strong persistent photoconductivity and ion beam induced conductivity are observed when the excitation source is switched off. The current decay is strongly increased when the irradiation chamber is vented with air suggesting that surface processes are at the origin of persistent conductivity. The observed conductivity changes are explained based on a model considering the creation of electron-hole pairs as well as adsorption and desorption processes of oxygen molecules at the surface of the samples.

AB - MoO3 lamellar single crystals were processed into planar metal-semiconductor-metal devices and subjected to irradiation cycles with ultraviolet light and 2 MeV protons in vacuum. In-situ electrical characterization demonstrates that these sensor devices respond well to the radiation with a gain of ~30% upon proton irradiation. However, response times are slow and strong persistent photoconductivity and ion beam induced conductivity are observed when the excitation source is switched off. The current decay is strongly increased when the irradiation chamber is vented with air suggesting that surface processes are at the origin of persistent conductivity. The observed conductivity changes are explained based on a model considering the creation of electron-hole pairs as well as adsorption and desorption processes of oxygen molecules at the surface of the samples.

KW - Ion beam induced conductivity

KW - Molybdenum trioxide

KW - Photoconductivity

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DO - 10.1016/j.surfcoat.2018.01.034

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VL - 355

SP - 50

EP - 54

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

ER -

Electrical characterization of molybdenum oxide lamellar crystals irradiated with UV light and proton beams

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Keywords

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