Electrical characterization of molybdenum oxide lamellar crystals irradiated with UV light and proton beams

D. R. Pereira, M. Peres, L. C. Alves, J. G. Correia, C. Díaz-Guerra, A. G. Silva, E. Alves, K. Lorenz

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

MoO3 lamellar single crystals were processed into planar metal-semiconductor-metal devices and subjected to irradiation cycles with ultraviolet light and 2 MeV protons in vacuum. In-situ electrical characterization demonstrates that these sensor devices respond well to the radiation with a gain of ~30% upon proton irradiation. However, response times are slow and strong persistent photoconductivity and ion beam induced conductivity are observed when the excitation source is switched off. The current decay is strongly increased when the irradiation chamber is vented with air suggesting that surface processes are at the origin of persistent conductivity. The observed conductivity changes are explained based on a model considering the creation of electron-hole pairs as well as adsorption and desorption processes of oxygen molecules at the surface of the samples.

Original languageEnglish
Pages (from-to)50-54
Number of pages5
JournalSurface and Coatings Technology
Volume355
DOIs
Publication statusPublished - 15 Dec 2018

Fingerprint

Molybdenum oxide
molybdenum oxides
Proton beams
proton beams
light beams
Ultraviolet radiation
Metals
Irradiation
Proton irradiation
conductivity
Crystals
Photoconductivity
Ion beams
crystals
Protons
Desorption
irradiation
proton irradiation
Single crystals
Vacuum

Keywords

  • Ion beam induced conductivity
  • Molybdenum trioxide
  • Photoconductivity

Cite this

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title = "Electrical characterization of molybdenum oxide lamellar crystals irradiated with UV light and proton beams",
abstract = "MoO3 lamellar single crystals were processed into planar metal-semiconductor-metal devices and subjected to irradiation cycles with ultraviolet light and 2 MeV protons in vacuum. In-situ electrical characterization demonstrates that these sensor devices respond well to the radiation with a gain of ~30{\%} upon proton irradiation. However, response times are slow and strong persistent photoconductivity and ion beam induced conductivity are observed when the excitation source is switched off. The current decay is strongly increased when the irradiation chamber is vented with air suggesting that surface processes are at the origin of persistent conductivity. The observed conductivity changes are explained based on a model considering the creation of electron-hole pairs as well as adsorption and desorption processes of oxygen molecules at the surface of the samples.",
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Electrical characterization of molybdenum oxide lamellar crystals irradiated with UV light and proton beams. / Pereira, D. R.; Peres, M.; Alves, L. C.; Correia, J. G.; Díaz-Guerra, C.; Silva, A. G.; Alves, E.; Lorenz, K.

In: Surface and Coatings Technology, Vol. 355, 15.12.2018, p. 50-54.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrical characterization of molybdenum oxide lamellar crystals irradiated with UV light and proton beams

AU - Pereira, D. R.

AU - Peres, M.

AU - Alves, L. C.

AU - Correia, J. G.

AU - Díaz-Guerra, C.

AU - Silva, A. G.

AU - Alves, E.

AU - Lorenz, K.

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PY - 2018/12/15

Y1 - 2018/12/15

N2 - MoO3 lamellar single crystals were processed into planar metal-semiconductor-metal devices and subjected to irradiation cycles with ultraviolet light and 2 MeV protons in vacuum. In-situ electrical characterization demonstrates that these sensor devices respond well to the radiation with a gain of ~30% upon proton irradiation. However, response times are slow and strong persistent photoconductivity and ion beam induced conductivity are observed when the excitation source is switched off. The current decay is strongly increased when the irradiation chamber is vented with air suggesting that surface processes are at the origin of persistent conductivity. The observed conductivity changes are explained based on a model considering the creation of electron-hole pairs as well as adsorption and desorption processes of oxygen molecules at the surface of the samples.

AB - MoO3 lamellar single crystals were processed into planar metal-semiconductor-metal devices and subjected to irradiation cycles with ultraviolet light and 2 MeV protons in vacuum. In-situ electrical characterization demonstrates that these sensor devices respond well to the radiation with a gain of ~30% upon proton irradiation. However, response times are slow and strong persistent photoconductivity and ion beam induced conductivity are observed when the excitation source is switched off. The current decay is strongly increased when the irradiation chamber is vented with air suggesting that surface processes are at the origin of persistent conductivity. The observed conductivity changes are explained based on a model considering the creation of electron-hole pairs as well as adsorption and desorption processes of oxygen molecules at the surface of the samples.

KW - Ion beam induced conductivity

KW - Molybdenum trioxide

KW - Photoconductivity

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