TY - JOUR
T1 - Effects of U.V. light on the transport properties of a-Si
T2 - H films during their growth
AU - Martins, R.
AU - Carvalho, N.
AU - Fortunato, E.
AU - Maçarico, A.
AU - Santos, M.
AU - Baia, I.
AU - Viera, M.
AU - Guimarães, L.
PY - 1987/12/2
Y1 - 1987/12/2
N2 - The influence of U.V. light on the transport properties of a-Si : H films during its growth in a r.f. double chamber system was investigated by conductivity, optical absorption, I.R. absorption, spectral photoconductivity and X-ray diffraction measurements. It was concluded that the presence of U.V. light during the deposition process controls the way how hydrogen is incorporated in the structure as well as the impurity atoms. The microcrystalline films investigated present sharp peaks in the I.R. spectra. Both boron and phosphorus doped films show conductivities higher than 10 S cm-1 and estimated crystalline sizes of the order of 80 Å.
AB - The influence of U.V. light on the transport properties of a-Si : H films during its growth in a r.f. double chamber system was investigated by conductivity, optical absorption, I.R. absorption, spectral photoconductivity and X-ray diffraction measurements. It was concluded that the presence of U.V. light during the deposition process controls the way how hydrogen is incorporated in the structure as well as the impurity atoms. The microcrystalline films investigated present sharp peaks in the I.R. spectra. Both boron and phosphorus doped films show conductivities higher than 10 S cm-1 and estimated crystalline sizes of the order of 80 Å.
UR - http://www.scopus.com/inward/record.url?scp=30244551513&partnerID=8YFLogxK
U2 - 10.1016/0022-3093(87)90335-8
DO - 10.1016/0022-3093(87)90335-8
M3 - Article
AN - SCOPUS:30244551513
VL - 97-98
SP - 1399
EP - 1402
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
SN - 0022-3093
IS - PART 2
ER -