Indium oxide thin films deposited byspray pyrolysiswere irradiated by 100MeV O7+ ions with different fluences of 5×1011, 1×1012 and 1×1013ions/cm2. X-ray diffraction analysis confirmed the structure of indium oxide with cubic bixbyite. The strongest (222) orientation observed from the as-deposited films was shifted to (400) after irradiation. Furthermore, the intensity of the (400) orientation was decreased with increasing fluence together with an increase in (222) intensity. Films irradiated with maximum fluence exhibited an amorphous component. The mobility of the as-deposited indium oxide films was decreased from ∼78.9 to 43.0cm2/Vs, following irradiation. Films irradiated with a fluence of 5×1011ions/cm2 showed a better combination of electrical properties, with a resistivity of 4.57×10−3Ωcm, carrier concentration of 2.2×1019cm−3 and mobility of 61.0cm2/Vs. The average transmittance obtained from the as-deposited films decreased from ∼81% to 72%, when irradiated with a fluence of 5×1011ions/cm2. The surfacemicrostructuresconfirmed that the irregularly shaped grains seen on the surface of the as-deposited films is modified as “radish-like” morphology when irradiated with a fluence of 5×1011ions/cm2.
|Journal||Nuclear Instruments & Methods In Physics Research Section B-Beam Interactio|
|Publication status||Published - 1 Jan 2011|