Effect of UV and visible light radiation on the electrical performances of transparent TFTs based on amorphous indium zinc oxide

nsensitivity to light irradiation is desirable for conventional applications of thin-film transistors, i.e., the active matrices of displays. However, if one produces a device presenting controlled sensitivity to light, many other applications can benefit or can even be created. In this work it is shown the influence of the photon energy on the optoelectronic properties presented by n-type bottom-gate thin-film transistors based on indium zinc oxide. In the dark, the devices present very good electrical properties, working in the enhancement mode, exhibiting on–off ratios higher than 107 and channel mobility above 30 cm2/V s. Remarkable results were achieved when the devices were exposed to light radiation, the most striking one is the possibility to switch between enhancement (in the dark) and depletion (illuminated) modes, with different threshold voltages and on/off ratios, function of the light power density and wavelength used. This type of behavior permits to design circuits where one can have the same transistor working either in the enhancement or depletion modes, function of the light beam and intensity impinging on it, highly important for short wavelength detector applications.