Effect of thickness on the properties of ITO thin films deposited by RF-PERTE on unheated, flexible, transparent substrates

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Abstract

The influence of thickness on the main properties of indium tin oxide (ITO) thin films deposited onto flexible, transparent polymer substrates at room temperature was studied. The deposition technique used was radio-frequency (RF) plasma-enhanced reactive thermal evaporation (RF-PERTE) of a 90% In-10% Sn alloy in the presence of oxygen. Results show that (1) the total transmittance is always approximately 80% at a wavelength of 500 nm when the thickness of the ITO films exceeds 70 nm and (2) ITO thin films with electrical resistivity of 6.2 × 10-3 Ω cm, free carrier mobility of approximately 1.2 cm2 V-1 s-1 and free carrier concentration of approximately 8.6× 1020 cm-3 are obtained, for films 100 nm thick. SEM investigations revealed that the surface morphology of the growing ITO thin film is dominated by the surface features of the flexible, transparent polymer substrate in the micron and submicron ranges, and does not vary significantly with thickness
Original languageEnglish
Pages (from-to)252-256
Number of pages5
JournalSurface & Coatings Technology
Volume151-152
Issue numberNA
DOIs
Publication statusPublished - 1 Mar 2002

Keywords

  • Flexible transparent substrates
  • Indium tin oxide (ITO)
  • RF plasma-enhanced reactive thermal evaporation (RF-PERTE)
  • Room temperature
  • Scanning electron microscopy (SEM)
  • Deposition
  • Evaporation
  • Polymers
  • Substrates
  • Surfaces
  • Thin films
  • Electrical resistivity
  • evaporation
  • indium
  • thickness
  • tin oxide

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