TY - JOUR
T1 - Effect of the tunnelling oxide growth by H2O2 oxidation on the performance of a-Si : H MIS photodiodes
AU - Águas, Hugo Manuel Brito
AU - Pereira, Luis Miguel Nunes
AU - Silva, Rui Jorge Cordeiro
AU - Fortunato, Elvira Maria Correia
AU - Martins, Rodrigo Ferrão de Paiva
PY - 2004/6/15
Y1 - 2004/6/15
N2 - In this work metal-insulator-semiconductor (MIS) photodiodes with a structure: Cr/a-Si:H(n(+))/a-Si:H(i)/oxide/Au were studied, where the main objective was to determine the influence of the oxide layer on the performance of the devices. The results achieved show that their performance is a function of both oxide thickness and oxide density. The a-Si:H oxidation method used was the immersion in H2O2 solution. By knowledge of the oxide growth process it was possible to fabricate photodiodes exhibiting an open circuit voltage of 0.65 V and short circuit current density under AM1.5 illumination of 11 mA/cm(2), with a response times less than 1 mus for load resistance <400 Omega, and a signal to noise ratio of 1 x 10(7). (C) 2003 Elsevier B.V. All rights reserved.
AB - In this work metal-insulator-semiconductor (MIS) photodiodes with a structure: Cr/a-Si:H(n(+))/a-Si:H(i)/oxide/Au were studied, where the main objective was to determine the influence of the oxide layer on the performance of the devices. The results achieved show that their performance is a function of both oxide thickness and oxide density. The a-Si:H oxidation method used was the immersion in H2O2 solution. By knowledge of the oxide growth process it was possible to fabricate photodiodes exhibiting an open circuit voltage of 0.65 V and short circuit current density under AM1.5 illumination of 11 mA/cm(2), with a response times less than 1 mus for load resistance <400 Omega, and a signal to noise ratio of 1 x 10(7). (C) 2003 Elsevier B.V. All rights reserved.
KW - Schottky
KW - a-Si : H
KW - MIS
KW - photodiodes
KW - response time
U2 - 10.1016/j.mseb.2003.10.075
DO - 10.1016/j.mseb.2003.10.075
M3 - Article
SN - 0921-5107
VL - 109
SP - 256
EP - 259
JO - Materials Science And Engineering B-Advanced Functional Solid-State Materials
JF - Materials Science And Engineering B-Advanced Functional Solid-State Materials
IS - 1-3
ER -