Effect of the load resistance in the linearity and sensitivity of MIS position sensitive detectors

Hugo Aguas; Luís Pereira; Leandro Raniero; Elvira Maria Correia Fortunato; Rodrigo Ferrão de Paiva Martins

doi:10.1557/PROC-862-A15.6

Effect of the load resistance in the linearity and sensitivity of MIS position sensitive detectors

Hugo Aguas, Luís Pereira, Leandro Raniero, Elvira Maria Correia Fortunato, Rodrigo Ferrão de Paiva Martins

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

It is experimentally known that the linearity and sensitivity of the position sensitive detectors (PSD) are dependent on the resistance of the collecting layer and of the load resistance, mainly if the detection is based on the measurement of the photo-lateral voltage. To determine the value of the load resistance to be used in metal - insulator - semiconductor (MIS) PSDs structures that lead to the maximum value of sensitivity and linearity, we propose all electrical model through which it is able to simulate the proper sensor response and how the load resistance influence the results obtained. This model is valid for PSDs where the resistance of the collecting resistive layer is quite low (<= 500 Omega), leading to a low output impedance. Under these conditions we conclude that the value of the load resistance should be of about 1 k Omega in order to achieve a good compromise between the linearity and the sensitivity of the PSD. This result is in agreement with the set of experiments performed.

Original language	English
Title of host publication	MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
Pages	691-696
Number of pages	6
Volume	862
DOIs	https://doi.org/10.1557/PROC-862-A15.6
Publication status	Published - 1 Jan 2005
Event	Symposium on Amorphous and Nanocrystalline Silicon Science and Technology held at the 2005 MRS Spring Meeting - Duration: 1 Jan 2005 → …

Conference

Conference	Symposium on Amorphous and Nanocrystalline Silicon Science and Technology held at the 2005 MRS Spring Meeting
Period	1/01/05 → …

Access to Document

10.1557/PROC-862-A15.6

Cite this

@inproceedings{1040f1ce401f4d9f8b9ce167393d63a5,

title = "Effect of the load resistance in the linearity and sensitivity of MIS position sensitive detectors",

abstract = "It is experimentally known that the linearity and sensitivity of the position sensitive detectors (PSD) are dependent on the resistance of the collecting layer and of the load resistance, mainly if the detection is based on the measurement of the photo-lateral voltage. To determine the value of the load resistance to be used in metal - insulator - semiconductor (MIS) PSDs structures that lead to the maximum value of sensitivity and linearity, we propose all electrical model through which it is able to simulate the proper sensor response and how the load resistance influence the results obtained. This model is valid for PSDs where the resistance of the collecting resistive layer is quite low (<= 500 Omega), leading to a low output impedance. Under these conditions we conclude that the value of the load resistance should be of about 1 k Omega in order to achieve a good compromise between the linearity and the sensitivity of the PSD. This result is in agreement with the set of experiments performed.",

author = "Hugo Aguas and Lu{\'i}s Pereira and Leandro Raniero and Fortunato, {Elvira Maria Correia} and Martins, {Rodrigo Ferr{\~a}o de Paiva}",

year = "2005",

month = jan,

day = "1",

doi = "10.1557/PROC-862-A15.6",

language = "English",

volume = "862",

pages = "691--696",

booktitle = "MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS",

note = "Symposium on Amorphous and Nanocrystalline Silicon Science and Technology held at the 2005 MRS Spring Meeting ; Conference date: 01-01-2005",

}

Aguas, H, Pereira, L, Raniero, L , Fortunato, EMC & Martins, RFDP 2005, Effect of the load resistance in the linearity and sensitivity of MIS position sensitive detectors. in MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS. vol. 862, A15.6, pp. 691-696, Symposium on Amorphous and Nanocrystalline Silicon Science and Technology held at the 2005 MRS Spring Meeting, 1/01/05. https://doi.org/10.1557/PROC-862-A15.6

TY - GEN

T1 - Effect of the load resistance in the linearity and sensitivity of MIS position sensitive detectors

AU - Aguas, Hugo

AU - Pereira, Luís

AU - Raniero, Leandro

AU - Fortunato, Elvira Maria Correia

AU - Martins, Rodrigo Ferrão de Paiva

PY - 2005/1/1

Y1 - 2005/1/1

N2 - It is experimentally known that the linearity and sensitivity of the position sensitive detectors (PSD) are dependent on the resistance of the collecting layer and of the load resistance, mainly if the detection is based on the measurement of the photo-lateral voltage. To determine the value of the load resistance to be used in metal - insulator - semiconductor (MIS) PSDs structures that lead to the maximum value of sensitivity and linearity, we propose all electrical model through which it is able to simulate the proper sensor response and how the load resistance influence the results obtained. This model is valid for PSDs where the resistance of the collecting resistive layer is quite low (<= 500 Omega), leading to a low output impedance. Under these conditions we conclude that the value of the load resistance should be of about 1 k Omega in order to achieve a good compromise between the linearity and the sensitivity of the PSD. This result is in agreement with the set of experiments performed.

AB - It is experimentally known that the linearity and sensitivity of the position sensitive detectors (PSD) are dependent on the resistance of the collecting layer and of the load resistance, mainly if the detection is based on the measurement of the photo-lateral voltage. To determine the value of the load resistance to be used in metal - insulator - semiconductor (MIS) PSDs structures that lead to the maximum value of sensitivity and linearity, we propose all electrical model through which it is able to simulate the proper sensor response and how the load resistance influence the results obtained. This model is valid for PSDs where the resistance of the collecting resistive layer is quite low (<= 500 Omega), leading to a low output impedance. Under these conditions we conclude that the value of the load resistance should be of about 1 k Omega in order to achieve a good compromise between the linearity and the sensitivity of the PSD. This result is in agreement with the set of experiments performed.

U2 - 10.1557/PROC-862-A15.6

DO - 10.1557/PROC-862-A15.6

M3 - Conference contribution

VL - 862

SP - 691

EP - 696

BT - MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

T2 - Symposium on Amorphous and Nanocrystalline Silicon Science and Technology held at the 2005 MRS Spring Meeting

Y2 - 1 January 2005

ER -

Effect of the load resistance in the linearity and sensitivity of MIS position sensitive detectors

Abstract

Conference

Access to Document

Fingerprint

Cite this