The effect of substrate temperature (T-s) on the properties of pyrolytically deposited nitrogen (N) doped zinc oxide (ZnO) thin films was investigated. The T-s was varied from 300 degrees C to 500 degrees C, with a step of 50 degrees C. The positive sign of Hall coefficient confirmed the p-type conductivity in the films deposited at 450 degrees C and 500 degrees C. X-ray diffraction studies confirmed the ZnO structure with a dominant peak from (1 00) crystal plane, irrespective of the variation in T-s. The presence of N in the ZnO structure was evidenced through X-ray photoelectron spectroscopy (XPS) analysis. The obtained high N concentration reveals that the 450 degrees C is the optimal T-s. Atomic force microscope (AFM) analysis showed that the surface roughness was increased with the increasing T-s until 400 degrees C but then decreased. It is found that the transmittance of the deposited films is increased with the increasing T-s. The optical band gap calculated from the absorption edge showed that the films deposited with T-s of 300 degrees C and 350 degrees C possess higher values than those deposited at higher T-s.
|Journal||Materials Science And Engineering B-Advanced Functional Solid-State Materials|
|Publication status||Published - 1 Jan 2013|