Effect of substrate temperature on the properties of pyrolytically deposited nitrogen-doped zinc oxide thin films

Elvira Maria Correia Fortunato; Rodrigo Ferrão de Paiva Martins

doi:10.1016/j.mseb.2012.10.021

Effect of substrate temperature on the properties of pyrolytically deposited nitrogen-doped zinc oxide thin films

Elvira Maria Correia Fortunato, Rodrigo Ferrão de Paiva Martins

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The effect of substrate temperature (T-s) on the properties of pyrolytically deposited nitrogen (N) doped zinc oxide (ZnO) thin films was investigated. The T-s was varied from 300 degrees C to 500 degrees C, with a step of 50 degrees C. The positive sign of Hall coefficient confirmed the p-type conductivity in the films deposited at 450 degrees C and 500 degrees C. X-ray diffraction studies confirmed the ZnO structure with a dominant peak from (1 00) crystal plane, irrespective of the variation in T-s. The presence of N in the ZnO structure was evidenced through X-ray photoelectron spectroscopy (XPS) analysis. The obtained high N concentration reveals that the 450 degrees C is the optimal T-s. Atomic force microscope (AFM) analysis showed that the surface roughness was increased with the increasing T-s until 400 degrees C but then decreased. It is found that the transmittance of the deposited films is increased with the increasing T-s. The optical band gap calculated from the absorption edge showed that the films deposited with T-s of 300 degrees C and 350 degrees C possess higher values than those deposited at higher T-s.

Original language	Unknown
Pages (from-to)	103-108
Journal	Materials Science And Engineering B-Advanced Functional Solid-State Materials
Volume	178
Issue number	1
DOIs	https://doi.org/10.1016/j.mseb.2012.10.021
Publication status	Published - 1 Jan 2013

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10.1016/j.mseb.2012.10.021

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title = "Effect of substrate temperature on the properties of pyrolytically deposited nitrogen-doped zinc oxide thin films",

abstract = "The effect of substrate temperature (T-s) on the properties of pyrolytically deposited nitrogen (N) doped zinc oxide (ZnO) thin films was investigated. The T-s was varied from 300 degrees C to 500 degrees C, with a step of 50 degrees C. The positive sign of Hall coefficient confirmed the p-type conductivity in the films deposited at 450 degrees C and 500 degrees C. X-ray diffraction studies confirmed the ZnO structure with a dominant peak from (1 00) crystal plane, irrespective of the variation in T-s. The presence of N in the ZnO structure was evidenced through X-ray photoelectron spectroscopy (XPS) analysis. The obtained high N concentration reveals that the 450 degrees C is the optimal T-s. Atomic force microscope (AFM) analysis showed that the surface roughness was increased with the increasing T-s until 400 degrees C but then decreased. It is found that the transmittance of the deposited films is increased with the increasing T-s. The optical band gap calculated from the absorption edge showed that the films deposited with T-s of 300 degrees C and 350 degrees C possess higher values than those deposited at higher T-s.",

keywords = "p-Type conductivity, X-ray photo-emission spectroscopy (XPS), Hall-effect measurement, Zinc oxide, Atomic force microscopy (AFM)",

author = "Fortunato, {Elvira Maria Correia} and Martins, {Rodrigo Ferr{\~a}o de Paiva}",

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Effect of substrate temperature on the properties of pyrolytically deposited nitrogen-doped zinc oxide thin films. / Fortunato, Elvira Maria Correia ; Martins, Rodrigo Ferrão de Paiva.

In: Materials Science And Engineering B-Advanced Functional Solid-State Materials, Vol. 178, No. 1, 01.01.2013, p. 103-108.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effect of substrate temperature on the properties of pyrolytically deposited nitrogen-doped zinc oxide thin films

AU - Fortunato, Elvira Maria Correia

AU - Martins, Rodrigo Ferrão de Paiva

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N2 - The effect of substrate temperature (T-s) on the properties of pyrolytically deposited nitrogen (N) doped zinc oxide (ZnO) thin films was investigated. The T-s was varied from 300 degrees C to 500 degrees C, with a step of 50 degrees C. The positive sign of Hall coefficient confirmed the p-type conductivity in the films deposited at 450 degrees C and 500 degrees C. X-ray diffraction studies confirmed the ZnO structure with a dominant peak from (1 00) crystal plane, irrespective of the variation in T-s. The presence of N in the ZnO structure was evidenced through X-ray photoelectron spectroscopy (XPS) analysis. The obtained high N concentration reveals that the 450 degrees C is the optimal T-s. Atomic force microscope (AFM) analysis showed that the surface roughness was increased with the increasing T-s until 400 degrees C but then decreased. It is found that the transmittance of the deposited films is increased with the increasing T-s. The optical band gap calculated from the absorption edge showed that the films deposited with T-s of 300 degrees C and 350 degrees C possess higher values than those deposited at higher T-s.

AB - The effect of substrate temperature (T-s) on the properties of pyrolytically deposited nitrogen (N) doped zinc oxide (ZnO) thin films was investigated. The T-s was varied from 300 degrees C to 500 degrees C, with a step of 50 degrees C. The positive sign of Hall coefficient confirmed the p-type conductivity in the films deposited at 450 degrees C and 500 degrees C. X-ray diffraction studies confirmed the ZnO structure with a dominant peak from (1 00) crystal plane, irrespective of the variation in T-s. The presence of N in the ZnO structure was evidenced through X-ray photoelectron spectroscopy (XPS) analysis. The obtained high N concentration reveals that the 450 degrees C is the optimal T-s. Atomic force microscope (AFM) analysis showed that the surface roughness was increased with the increasing T-s until 400 degrees C but then decreased. It is found that the transmittance of the deposited films is increased with the increasing T-s. The optical band gap calculated from the absorption edge showed that the films deposited with T-s of 300 degrees C and 350 degrees C possess higher values than those deposited at higher T-s.

KW - p-Type conductivity

KW - X-ray photo-emission spectroscopy (XPS)

KW - Hall-effect measurement

KW - Zinc oxide

KW - Atomic force microscopy (AFM)

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DO - 10.1016/j.mseb.2012.10.021

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