Effect of different TCO interfaces on the performances presented by hydrogenated amorphous silicon p-i-n solar cells

Elvira Fortunato; Carlos N. Carvalho; Ana Bicho; Rodrigo Martins

Effect of different TCO interfaces on the performances presented by hydrogenated amorphous silicon p-i-n solar cells

Elvira Fortunato, Carlos N. Carvalho, Ana Bicho, Rodrigo Martins

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper we report results concerning the effect of the TCO interface on hydrogenated amorphous silicon (a-Si:H) p-i-n homojunction solar cells. Its correlation with dark current density-voltage (J-V) characteristics and spectral response, before and after while light-soaking degradation, is analysed. From this study, we conclude that the properties and stability of these devices are not only influenced by the a-Si:H film properties, but also by the properties of the transparent conductive electrode and its interface with the a-Si:H layer.

Original language	English
Pages (from-to)	646-649
Number of pages	4
Journal	Proceedings of the IEEE
Volume	1
Publication status	Published - 1994

Cite this

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title = "Effect of different TCO interfaces on the performances presented by hydrogenated amorphous silicon p-i-n solar cells",

abstract = "In this paper we report results concerning the effect of the TCO interface on hydrogenated amorphous silicon (a-Si:H) p-i-n homojunction solar cells. Its correlation with dark current density-voltage (J-V) characteristics and spectral response, before and after while light-soaking degradation, is analysed. From this study, we conclude that the properties and stability of these devices are not only influenced by the a-Si:H film properties, but also by the properties of the transparent conductive electrode and its interface with the a-Si:H layer.",

author = "Elvira Fortunato and Carvalho, {Carlos N.} and Ana Bicho and Rodrigo Martins",

year = "1994",

language = "English",

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journal = "Proceedings of the IEEE",

issn = "0018-9219",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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AU - Fortunato, Elvira

AU - Carvalho, Carlos N.

AU - Bicho, Ana

AU - Martins, Rodrigo

PY - 1994

Y1 - 1994

N2 - In this paper we report results concerning the effect of the TCO interface on hydrogenated amorphous silicon (a-Si:H) p-i-n homojunction solar cells. Its correlation with dark current density-voltage (J-V) characteristics and spectral response, before and after while light-soaking degradation, is analysed. From this study, we conclude that the properties and stability of these devices are not only influenced by the a-Si:H film properties, but also by the properties of the transparent conductive electrode and its interface with the a-Si:H layer.

AB - In this paper we report results concerning the effect of the TCO interface on hydrogenated amorphous silicon (a-Si:H) p-i-n homojunction solar cells. Its correlation with dark current density-voltage (J-V) characteristics and spectral response, before and after while light-soaking degradation, is analysed. From this study, we conclude that the properties and stability of these devices are not only influenced by the a-Si:H film properties, but also by the properties of the transparent conductive electrode and its interface with the a-Si:H layer.

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M3 - Article

AN - SCOPUS:0028704495

SN - 0018-9219

VL - 1

SP - 646

EP - 649

JO - Proceedings of the IEEE

JF - Proceedings of the IEEE

ER -

Effect of different TCO interfaces on the performances presented by hydrogenated amorphous silicon p-i-n solar cells

Abstract

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