In this paper we report results concerning the effect of the TCO interface on hydrogenated amorphous silicon (a-Si:H) p-i-n homojunction solar cells. Its correlation with dark current density-voltage (J-V) characteristics and spectral response, before and after while light-soaking degradation, is analysed. From this study, we conclude that the properties and stability of these devices are not only influenced by the a-Si:H film properties, but also by the properties of the transparent conductive electrode and its interface with the a-Si:H layer.
|Number of pages||4|
|Journal||Proceedings Of The Ieee|
|Publication status||Published - 1994|