Effect of different dopant elements on the properties of ZnO thin films

Patrícia Nunes; Elvira Maria Correia Fortunato; P. M N Tonello; Francisco Manuel Braz Fernandes; Paula Vilarinho; Rodrigo Ferrão de Paiva Martins

doi:10.1016/S0042-207X(01)00322-0

Effect of different dopant elements on the properties of ZnO thin films

Patrícia Nunes, Elvira Maria Correia Fortunato, P. M N Tonello, Francisco Manuel Braz Fernandes, Paula Vilarinho, Rodrigo Ferrão de Paiva Martins

Research output: Contribution to journal › Article › peer-review

378 Citations (Scopus)

Abstract

In this work we studied the influence of the dopant elements and concentration on the properties of ZnO thin film deposited by spray pyrolysis. The results show that the doping affects the thin films properties mainly the electrical ones, function of dopant concentration and nature. The most important changes were observed for films doped with 1 at% of indium which exhibit a resistivity of 1.9101Ocm associated with a transmitance of 90%. After the annealing treatment, the resistivity of the film decreases to 5.9103Ocm without significative changes in the optical properties. The films were also used to produce amorphous silicon solar cells where the best results were obtained for ZnO : In. r 2002 Elsevier Science Ltd. All rights reserved.

Original language	English
Pages (from-to)	281-285
Number of pages	5
Journal	Vacuum
Volume	64
Issue number	3-4
DOIs	https://doi.org/10.1016/S0042-207X(01)00322-0
Publication status	Published - 1 Jan 2002

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@article{4ac3173caaf54ec5bfc840625cca6bde,

title = "Effect of different dopant elements on the properties of ZnO thin films",

abstract = "In this work we studied the influence of the dopant elements and concentration on the properties of ZnO thin film deposited by spray pyrolysis. The results show that the doping affects the thin films properties mainly the electrical ones, function of dopant concentration and nature. The most important changes were observed for films doped with 1 at% of indium which exhibit a resistivity of 1.9101Ocm associated with a transmitance of 90%. After the annealing treatment, the resistivity of the film decreases to 5.9103Ocm without significative changes in the optical properties. The films were also used to produce amorphous silicon solar cells where the best results were obtained for ZnO : In. r 2002 Elsevier Science Ltd. All rights reserved.",

keywords = "Spray pyrolysis, Thin films, Zinc oxide, Doping, TCO",

author = "Patr{\'i}cia Nunes and Fortunato, {Elvira Maria Correia} and Tonello, {P. M N} and {Braz Fernandes}, {Francisco Manuel} and Paula Vilarinho and Martins, {Rodrigo Ferr{\~a}o de Paiva}",

year = "2002",

month = jan,

day = "1",

doi = "10.1016/S0042-207X(01)00322-0",

language = "English",

volume = "64",

pages = "281--285",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier",

number = "3-4",

}

TY - JOUR

T1 - Effect of different dopant elements on the properties of ZnO thin films

AU - Nunes, Patrícia

AU - Fortunato, Elvira Maria Correia

AU - Tonello, P. M N

AU - Braz Fernandes, Francisco Manuel

AU - Vilarinho, Paula

AU - Martins, Rodrigo Ferrão de Paiva

PY - 2002/1/1

Y1 - 2002/1/1

N2 - In this work we studied the influence of the dopant elements and concentration on the properties of ZnO thin film deposited by spray pyrolysis. The results show that the doping affects the thin films properties mainly the electrical ones, function of dopant concentration and nature. The most important changes were observed for films doped with 1 at% of indium which exhibit a resistivity of 1.9101Ocm associated with a transmitance of 90%. After the annealing treatment, the resistivity of the film decreases to 5.9103Ocm without significative changes in the optical properties. The films were also used to produce amorphous silicon solar cells where the best results were obtained for ZnO : In. r 2002 Elsevier Science Ltd. All rights reserved.

AB - In this work we studied the influence of the dopant elements and concentration on the properties of ZnO thin film deposited by spray pyrolysis. The results show that the doping affects the thin films properties mainly the electrical ones, function of dopant concentration and nature. The most important changes were observed for films doped with 1 at% of indium which exhibit a resistivity of 1.9101Ocm associated with a transmitance of 90%. After the annealing treatment, the resistivity of the film decreases to 5.9103Ocm without significative changes in the optical properties. The films were also used to produce amorphous silicon solar cells where the best results were obtained for ZnO : In. r 2002 Elsevier Science Ltd. All rights reserved.

KW - Spray pyrolysis

KW - Thin films

KW - Zinc oxide

KW - Doping

KW - TCO

U2 - 10.1016/S0042-207X(01)00322-0

DO - 10.1016/S0042-207X(01)00322-0

M3 - Article

SN - 0042-207X

VL - 64

SP - 281

EP - 285

JO - Vacuum

JF - Vacuum

IS - 3-4

ER -

Effect of different dopant elements on the properties of ZnO thin films

Abstract

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