TY - JOUR
T1 - Effect of annealing on molybdenum doped indium oxide thin films RF sputtered at room temperature
AU - Elangovan, Elamurugu
AU - Marques, António
AU - Pimentel, Ana C.
AU - Martins, Rodrigo Ferrão Paiva
AU - Fortunato, Elvira M. C.
PY - 2008/8/8
Y1 - 2008/8/8
N2 - Thin films of molybdenum doped indium oxide (IMO) were deposited on glass at room temperature using an in-built three-source RF magnetron sputtering. The films were studied as a function of oxygen volume percentage (O2 vol. %; ranging from 0.0 to 17.5%) in the sputtering chamber. The as-deposited amorphous films were crystallized on post-annealing. The as-deposited films are low conducting and Hall coefficients were undetectable; whereas post-annealed films possess fairly high conductivity. The lowest transmittance (11.96% at 600 nm) observed from the films deposited without oxygen increased to a maximum of 88.01% (3.5 O2 vol. %); whereas this transmittance was decreased with the increasing O2 vol. % to as low as 81.04% (15.6 O2 vol. %); a maximum of 89.80% was obtained from the films annealed at 500 °C in open air (3.5 O2 vol. %). The optical band gap of 3.80 eV obtained from the films deposited without oxygen increased with increasing O2 vol. % to as high as 3.91 eV (17.5 O2 vol. %). A maximum of 3.92 eV was obtained from the films annealed at 300 °C in N2:H2 gas atmosphere (17.5 O2 vol. %).
AB - Thin films of molybdenum doped indium oxide (IMO) were deposited on glass at room temperature using an in-built three-source RF magnetron sputtering. The films were studied as a function of oxygen volume percentage (O2 vol. %; ranging from 0.0 to 17.5%) in the sputtering chamber. The as-deposited amorphous films were crystallized on post-annealing. The as-deposited films are low conducting and Hall coefficients were undetectable; whereas post-annealed films possess fairly high conductivity. The lowest transmittance (11.96% at 600 nm) observed from the films deposited without oxygen increased to a maximum of 88.01% (3.5 O2 vol. %); whereas this transmittance was decreased with the increasing O2 vol. % to as low as 81.04% (15.6 O2 vol. %); a maximum of 89.80% was obtained from the films annealed at 500 °C in open air (3.5 O2 vol. %). The optical band gap of 3.80 eV obtained from the films deposited without oxygen increased with increasing O2 vol. % to as high as 3.91 eV (17.5 O2 vol. %). A maximum of 3.92 eV was obtained from the films annealed at 300 °C in N2:H2 gas atmosphere (17.5 O2 vol. %).
KW - Indium oxide
KW - Molybdenum doping
KW - Thin films and RF sputtering
UR - http://www.scopus.com/inward/record.url?scp=49349088879&partnerID=8YFLogxK
U2 - 10.1016/j.vacuum.2008.03.005
DO - 10.1016/j.vacuum.2008.03.005
M3 - Article
AN - SCOPUS:49349088879
SN - 0042-207X
VL - 82
SP - 1489
EP - 1494
JO - Vacuum
JF - Vacuum
IS - 12
ER -