Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si : H MIS photodiodes

Hugo Manuel Brito Águas; Luis Miguel Nunes Pereira; Isabel Maria Mercês Ferreira; Ariel Rita L. Ramos; A. S. Viana; Jordi Andreu; Paula Vilarinho; Elvira Maria Correia Fortunato; Rodrigo Ferrão de Paiva Martins

doi:10.1016/j.jnoncrysol.2004.03.097

Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si : H MIS photodiodes

Hugo Manuel Brito Águas, Luis Miguel Nunes Pereira, Isabel Maria Mercês Ferreira, Ariel Rita L. Ramos, A. S. Viana, Jordi Andreu, Paula Vilarinho, Elvira Maria Correia Fortunato, Rodrigo Ferrão de Paiva Martins

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

This work presents a study on the effect of an interfacial silicon oxide layer placed between Au and a-Si:H MIS (metal-insulator-semiconductor) photodiodes in their performances, by stopping the Au diffusion towards the a-Si:H. The results show that the Au diffuses very easily to the oxide free a-Si:H surface, even at room temperature, degrading the photodiode performance. On the other hand, the MIS photodiodes with the interfacial oxide show an improvement of their characteristics after annealing, function of its thickness, and degree of film's compactness. This effect is associated with the presence of oxide of thicknesses ⩾5 Å at the Au/a-Si:H interface that prevents the Au diffusion and improves the photodiode characteristics, which does not happen when the interfacial oxide is absent

Original language	English
Pages (from-to)	810-813
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	338-40
Issue number	1 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jnoncrysol.2004.03.097
Publication status	Published - 15 Jun 2004

Access to Document

10.1016/j.jnoncrysol.2004.03.097

Fingerprint Dive into the research topics of 'Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si : H MIS photodiodes'. Together they form a unique fingerprint.

Cite this

Águas, H. M. B., Pereira, L. M. N., Ferreira, I. M. M., Ramos, A. R. L., Viana, A. S., Andreu, J., Vilarinho, P., Fortunato, E. M. C., & Martins, R. F. D. P. (2004). Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si : H MIS photodiodes. Journal of Non-Crystalline Solids, 338-40(1 SPEC. ISS.), 810-813. https://doi.org/10.1016/j.jnoncrysol.2004.03.097

Águas, Hugo Manuel Brito ; Pereira, Luis Miguel Nunes ; Ferreira, Isabel Maria Mercês ; Ramos, Ariel Rita L. ; Viana, A. S. ; Andreu, Jordi ; Vilarinho, Paula ; Fortunato, Elvira Maria Correia ; Martins, Rodrigo Ferrão de Paiva. / Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si : H MIS photodiodes. In: Journal of Non-Crystalline Solids. 2004 ; Vol. 338-40, No. 1 SPEC. ISS. pp. 810-813.

@article{4ab5c7d507ac482ab04cac2530ef8dc4,

title = "Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si : H MIS photodiodes",

abstract = "This work presents a study on the effect of an interfacial silicon oxide layer placed between Au and a-Si:H MIS (metal-insulator-semiconductor) photodiodes in their performances, by stopping the Au diffusion towards the a-Si:H. The results show that the Au diffuses very easily to the oxide free a-Si:H surface, even at room temperature, degrading the photodiode performance. On the other hand, the MIS photodiodes with the interfacial oxide show an improvement of their characteristics after annealing, function of its thickness, and degree of film's compactness. This effect is associated with the presence of oxide of thicknesses ⩾5 {\AA} at the Au/a-Si:H interface that prevents the Au diffusion and improves the photodiode characteristics, which does not happen when the interfacial oxide is absent",

author = "{\'A}guas, {Hugo Manuel Brito} and Pereira, {Luis Miguel Nunes} and Ferreira, {Isabel Maria Merc{\^e}s} and Ramos, {Ariel Rita L.} and Viana, {A. S.} and Jordi Andreu and Paula Vilarinho and Fortunato, {Elvira Maria Correia} and Martins, {Rodrigo Ferr{\~a}o de Paiva}",

year = "2004",

month = jun,

day = "15",

doi = "10.1016/j.jnoncrysol.2004.03.097",

language = "English",

volume = "338-40",

pages = "810--813",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier Science B.V., Amsterdam.",

number = "1 SPEC. ISS.",

}

Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si : H MIS photodiodes. / Águas, Hugo Manuel Brito ; Pereira, Luis Miguel Nunes ; Ferreira, Isabel Maria Mercês; Ramos, Ariel Rita L.; Viana, A. S.; Andreu, Jordi; Vilarinho, Paula; Fortunato, Elvira Maria Correia ; Martins, Rodrigo Ferrão de Paiva.

In: Journal of Non-Crystalline Solids, Vol. 338-40, No. 1 SPEC. ISS., 15.06.2004, p. 810-813.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si : H MIS photodiodes

AU - Águas, Hugo Manuel Brito

AU - Pereira, Luis Miguel Nunes

AU - Ferreira, Isabel Maria Mercês

AU - Ramos, Ariel Rita L.

AU - Viana, A. S.

AU - Andreu, Jordi

AU - Vilarinho, Paula

AU - Fortunato, Elvira Maria Correia

AU - Martins, Rodrigo Ferrão de Paiva

PY - 2004/6/15

Y1 - 2004/6/15

N2 - This work presents a study on the effect of an interfacial silicon oxide layer placed between Au and a-Si:H MIS (metal-insulator-semiconductor) photodiodes in their performances, by stopping the Au diffusion towards the a-Si:H. The results show that the Au diffuses very easily to the oxide free a-Si:H surface, even at room temperature, degrading the photodiode performance. On the other hand, the MIS photodiodes with the interfacial oxide show an improvement of their characteristics after annealing, function of its thickness, and degree of film's compactness. This effect is associated with the presence of oxide of thicknesses ⩾5 Å at the Au/a-Si:H interface that prevents the Au diffusion and improves the photodiode characteristics, which does not happen when the interfacial oxide is absent

AB - This work presents a study on the effect of an interfacial silicon oxide layer placed between Au and a-Si:H MIS (metal-insulator-semiconductor) photodiodes in their performances, by stopping the Au diffusion towards the a-Si:H. The results show that the Au diffuses very easily to the oxide free a-Si:H surface, even at room temperature, degrading the photodiode performance. On the other hand, the MIS photodiodes with the interfacial oxide show an improvement of their characteristics after annealing, function of its thickness, and degree of film's compactness. This effect is associated with the presence of oxide of thicknesses ⩾5 Å at the Au/a-Si:H interface that prevents the Au diffusion and improves the photodiode characteristics, which does not happen when the interfacial oxide is absent

U2 - 10.1016/j.jnoncrysol.2004.03.097

DO - 10.1016/j.jnoncrysol.2004.03.097

M3 - Article

VL - 338-40

SP - 810

EP - 813

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

IS - 1 SPEC. ISS.

ER -