Eco-friendly water-induced aluminum oxide dielectrics and their application in a hybrid metal oxide/polymer TFT

Ao Liu, Guoxia Liu, Huihui Zhu, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, Fukai Shan

Research output: Contribution to journalArticle

47 Citations (Scopus)
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Abstract

Solution-processed oxide semiconductors have been widely studied with the objective of achieving high-performance, sustainable and low-cost electronic devices. In this report a simple and eco-friendly water-inducement method has been developed to fabricate high-k dielectrics and hybrid thin-film transistors (TFTs); introducing metal nitrates and deionized water as the precursor materials. The AlOx dielectric films annealed at temperatures higher than 350 °C result in low leakage current densities and the dielectric constants are nearly 7. Instead of the conventional oxide semiconductors, water-induced (WI) polyvinylprrolidone (PVP) was introduced into the In2O3 solution to form a hybrid metal oxide/polymer channel layer. The 250 °C-annealed WI In2O3:PVP TFTs based on AlOx dielectric exhibit outstanding electrical performances and high stability. These promising properties were obtained at an ultra-low operating voltage of 2 V. The WI metal oxide/polymer hybrid TFTs are promising alternatives for applications in low-cost, low-consumption and eco-friendly flexible electronics.

Original languageEnglish
Pages (from-to)86606-86613
Number of pages8
JournalRCS Advances
Volume5
Issue number105
DOIs
Publication statusPublished - 2015

Keywords

  • THIN-FILM TRANSISTORS
  • FIELD-EFFECT TRANSISTORS
  • HIGH-PERFORMANCE
  • LOW-TEMPERATURE
  • GATE DIELECTRICS
  • ELECTRICAL PERFORMANCE
  • COMBUSTION SYNTHESIS
  • AQUEOUS-SOLUTION
  • TRANSPARENT;
  • CHANNELS

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