Dynamic characterization of large area image sensing structures based on a-SiC:H

M. Fernandes, M. Vieira, Rodrigo Ferrão de Paiva Martins

Research output: Contribution to journalConference articlepeer-review


The working principle of silicon p-i-n structures with low conductivity (σd) doped layers as single element image sensors is based on the modulation, by the local illumination conditions of the photocurrent generated by a light beam scanning the active area of the device. A higher sensitivity is achieved using a wide band gap a-Si:C alloy in the doped layers, improving the light penetration into the intrinsic semiconductor and reducing the lateral currents in the structure, which are responsible by an image smearing effect observed in sensors with high σd doped layers. This work focuses on the transient response of such sensor and on the role of the carbon (C) content of the doped layers. A set of devices with different percentage of C incorporation in the doped layers is analyzed by measuring the scanner-induced photocurrent under different bias conditions, (ranging from -1.5V to 1V) in order to evaluate the response time.

Original languageEnglish
Pages (from-to)86-90
Number of pages5
JournalMaterials Science Forum
Publication statusPublished - 28 Jul 2004
Event2nd International Materials Symposium - Caparica, Portugal
Duration: 14 Apr 200316 Apr 2003


  • Amorphous silicon
  • Image sensor
  • Large area


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