Dynamic characterization of large area image sensing structures based on a-SiC:H

M. Fernandes; M. Vieira; Rodrigo Ferrão de Paiva Martins

doi:10.4028/www.scientific.net/MSF.455-456.86

Dynamic characterization of large area image sensing structures based on a-SiC:H

M. Fernandes, M. Vieira, Rodrigo Ferrão de Paiva Martins

DCM - Departamento de Ciência dos Materiais

Research output: Contribution to journal › Conference article › peer-review

Abstract

The working principle of silicon p-i-n structures with low conductivity (σ_d) doped layers as single element image sensors is based on the modulation, by the local illumination conditions of the photocurrent generated by a light beam scanning the active area of the device. A higher sensitivity is achieved using a wide band gap a-Si:C alloy in the doped layers, improving the light penetration into the intrinsic semiconductor and reducing the lateral currents in the structure, which are responsible by an image smearing effect observed in sensors with high σ_d doped layers. This work focuses on the transient response of such sensor and on the role of the carbon (C) content of the doped layers. A set of devices with different percentage of C incorporation in the doped layers is analyzed by measuring the scanner-induced photocurrent under different bias conditions, (ranging from -1.5V to 1V) in order to evaluate the response time.

Original language	English
Pages (from-to)	86-90
Number of pages	5
Journal	Materials Science Forum
Volume	455-456
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.455-456.86
Publication status	Published - 28 Jul 2004
Event	2nd International Materials Symposium - Caparica, Portugal Duration: 14 Apr 2003 → 16 Apr 2003

Keywords

Amorphous silicon
Image sensor
Large area

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title = "Dynamic characterization of large area image sensing structures based on a-SiC:H",

abstract = "The working principle of silicon p-i-n structures with low conductivity (σd) doped layers as single element image sensors is based on the modulation, by the local illumination conditions of the photocurrent generated by a light beam scanning the active area of the device. A higher sensitivity is achieved using a wide band gap a-Si:C alloy in the doped layers, improving the light penetration into the intrinsic semiconductor and reducing the lateral currents in the structure, which are responsible by an image smearing effect observed in sensors with high σd doped layers. This work focuses on the transient response of such sensor and on the role of the carbon (C) content of the doped layers. A set of devices with different percentage of C incorporation in the doped layers is analyzed by measuring the scanner-induced photocurrent under different bias conditions, (ranging from -1.5V to 1V) in order to evaluate the response time.",

keywords = "Amorphous silicon, Image sensor, Large area",

author = "M. Fernandes and M. Vieira and Martins, {Rodrigo Ferr{\~a}o de Paiva}",

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AU - Vieira, M.

AU - Martins, Rodrigo Ferrão de Paiva

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N2 - The working principle of silicon p-i-n structures with low conductivity (σd) doped layers as single element image sensors is based on the modulation, by the local illumination conditions of the photocurrent generated by a light beam scanning the active area of the device. A higher sensitivity is achieved using a wide band gap a-Si:C alloy in the doped layers, improving the light penetration into the intrinsic semiconductor and reducing the lateral currents in the structure, which are responsible by an image smearing effect observed in sensors with high σd doped layers. This work focuses on the transient response of such sensor and on the role of the carbon (C) content of the doped layers. A set of devices with different percentage of C incorporation in the doped layers is analyzed by measuring the scanner-induced photocurrent under different bias conditions, (ranging from -1.5V to 1V) in order to evaluate the response time.

AB - The working principle of silicon p-i-n structures with low conductivity (σd) doped layers as single element image sensors is based on the modulation, by the local illumination conditions of the photocurrent generated by a light beam scanning the active area of the device. A higher sensitivity is achieved using a wide band gap a-Si:C alloy in the doped layers, improving the light penetration into the intrinsic semiconductor and reducing the lateral currents in the structure, which are responsible by an image smearing effect observed in sensors with high σd doped layers. This work focuses on the transient response of such sensor and on the role of the carbon (C) content of the doped layers. A set of devices with different percentage of C incorporation in the doped layers is analyzed by measuring the scanner-induced photocurrent under different bias conditions, (ranging from -1.5V to 1V) in order to evaluate the response time.

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KW - Image sensor

KW - Large area

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Dynamic characterization of large area image sensing structures based on a-SiC:H

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Keywords

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