Double Feedforward 0.6 V LNA with High Gain and Low Noise Figure

Luís Augusto Bica Gomes de Oliveira; João Pedro Abreu de Oliveira; João Carlos da Palma Goes; I. Bastos; Manuel de Medeiros Silva

Double Feedforward 0.6 V LNA with High Gain and Low Noise Figure

Luís Augusto Bica Gomes de Oliveira, João Pedro Abreu de Oliveira, João Carlos da Palma Goes, I. Bastos, Manuel de Medeiros Silva

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

We present a balun LNA with double feedforward and noise and distortion cancellation. This LNA combines a common-gate and a common-source stage, in which the resistive loads are replaced by transistors biased close to saturation. This allows low supply voltage, without gain degradation. The proposed feedforward approach boosts the LNA gain and reduces the noise figure (NF). Simulation results with a 130 nm CMOS technology show that the gain is enhanced up to 24 dB and the NF is below 3.2 dB. The total power dissipation is 2.25 mW, leading to an FOM of 6.4 mW-1for 0.6 V supply.

Original language	English
Title of host publication	Proceedings of the 20th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES 2013)
Pages	235-238
Publication status	Published - 1 Jan 2013
Event	MIXDES 2013: 20th International Conference on Mixed Design of Integrated Circuits and Systems - Duration: 1 Jan 2013 → …

Conference

Conference	MIXDES 2013: 20th International Conference on Mixed Design of Integrated Circuits and Systems
Period	1/01/13 → …

Cite this

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title = "Double Feedforward 0.6 V LNA with High Gain and Low Noise Figure",

abstract = "We present a balun LNA with double feedforward and noise and distortion cancellation. This LNA combines a common-gate and a common-source stage, in which the resistive loads are replaced by transistors biased close to saturation. This allows low supply voltage, without gain degradation. The proposed feedforward approach boosts the LNA gain and reduces the noise figure (NF). Simulation results with a 130 nm CMOS technology show that the gain is enhanced up to 24 dB and the NF is below 3.2 dB. The total power dissipation is 2.25 mW, leading to an FOM of 6.4 mW-1for 0.6 V supply.",

keywords = "LNA, noise cancellation, CMOS",

author = "Oliveira, {Lu{\'i}s Augusto Bica Gomes de} and Oliveira, {Jo{\~a}o Pedro Abreu de} and Goes, {Jo{\~a}o Carlos da Palma} and I. Bastos and Silva, {Manuel de Medeiros}",

note = "Sem PDF# national funds through FCT - Portuguese Foundation for Science and Technology PEst-OE/EEI/LA0021/2011 PEst-OETEEI/UI0066/2011 PTDC/EEA-ELC/101421/2008 SFRH/BD/68946/2010. ; MIXDES 2013: 20th International Conference on Mixed Design of Integrated Circuits and Systems ; Conference date: 01-01-2013",

year = "2013",

month = jan,

day = "1",

language = "English",

isbn = "978-83-63578-00-8",

pages = "235--238",

booktitle = "Proceedings of the 20th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES 2013)",

}

Oliveira, LABGD , Oliveira, JPAD , Goes, JCDP, Bastos, I & Silva, MDM 2013, Double Feedforward 0.6 V LNA with High Gain and Low Noise Figure. in Proceedings of the 20th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES 2013)., 6613347, pp. 235-238, MIXDES 2013: 20th International Conference on Mixed Design of Integrated Circuits and Systems, 1/01/13.

Double Feedforward 0.6 V LNA with High Gain and Low Noise Figure. / Oliveira, Luís Augusto Bica Gomes de ; Oliveira, João Pedro Abreu de ; Goes, João Carlos da Palma et al.
Proceedings of the 20th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES 2013). 2013. p. 235-238 6613347.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Double Feedforward 0.6 V LNA with High Gain and Low Noise Figure

AU - Oliveira, Luís Augusto Bica Gomes de

AU - Oliveira, João Pedro Abreu de

AU - Goes, João Carlos da Palma

AU - Bastos, I.

AU - Silva, Manuel de Medeiros

N1 - Sem PDF# national funds through FCT - Portuguese Foundation for Science and Technology PEst-OE/EEI/LA0021/2011 PEst-OETEEI/UI0066/2011 PTDC/EEA-ELC/101421/2008 SFRH/BD/68946/2010.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - We present a balun LNA with double feedforward and noise and distortion cancellation. This LNA combines a common-gate and a common-source stage, in which the resistive loads are replaced by transistors biased close to saturation. This allows low supply voltage, without gain degradation. The proposed feedforward approach boosts the LNA gain and reduces the noise figure (NF). Simulation results with a 130 nm CMOS technology show that the gain is enhanced up to 24 dB and the NF is below 3.2 dB. The total power dissipation is 2.25 mW, leading to an FOM of 6.4 mW-1for 0.6 V supply.

AB - We present a balun LNA with double feedforward and noise and distortion cancellation. This LNA combines a common-gate and a common-source stage, in which the resistive loads are replaced by transistors biased close to saturation. This allows low supply voltage, without gain degradation. The proposed feedforward approach boosts the LNA gain and reduces the noise figure (NF). Simulation results with a 130 nm CMOS technology show that the gain is enhanced up to 24 dB and the NF is below 3.2 dB. The total power dissipation is 2.25 mW, leading to an FOM of 6.4 mW-1for 0.6 V supply.

KW - LNA

KW - noise cancellation

KW - CMOS

M3 - Conference contribution

SN - 978-83-63578-00-8

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EP - 238

BT - Proceedings of the 20th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES 2013)

T2 - MIXDES 2013: 20th International Conference on Mixed Design of Integrated Circuits and Systems

Y2 - 1 January 2013

ER -

Double Feedforward 0.6 V LNA with High Gain and Low Noise Figure

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