TY - JOUR
T1 - Dopant transfer from poly-si thin films to c-Si
T2 - An alternative technique for device processing
AU - Ricardo, L.
AU - Amaral, A.
AU - Carvalho, C.
AU - Lavareda, G.
N1 - Portuguese Science and Technology Foundation - PTDC/EEA-ELC/108882/2008
PY - 2016/2/1
Y1 - 2016/2/1
N2 - An alternative technique for production of devices which uses both silicon crystalline wafers (p-type) and heavy doped amorphous silicon thin films (n-type) is reported. The amorphous silicon acts as a finite source of dopant and is deposited (at low temperature, 70 °C) by plasma enhanced chemical vapor deposition on silicon wafers. Afterwards, the process of dopant diffusion into the crystalline silicon occurs in a diffusion furnace at 1000 °C for 2 h, to create p-n junctions. Using SIMS analyses, a dopant (P) transfer into c-Si of about 30% is verified and 87% of the dopant transferred is electrically active. Consequently, n-MOSFET devices are produced using a gate oxide thermally grown at the same diffusion temperature for one hour. The preliminary results of the MOSFET (channel length and width of 0.5 and 5 mm, respectively) show a depletion behavior with a threshold voltage, Vth=-8.2 V and afield-effect mobility, μFE=187.8 cm2/(Vs).
AB - An alternative technique for production of devices which uses both silicon crystalline wafers (p-type) and heavy doped amorphous silicon thin films (n-type) is reported. The amorphous silicon acts as a finite source of dopant and is deposited (at low temperature, 70 °C) by plasma enhanced chemical vapor deposition on silicon wafers. Afterwards, the process of dopant diffusion into the crystalline silicon occurs in a diffusion furnace at 1000 °C for 2 h, to create p-n junctions. Using SIMS analyses, a dopant (P) transfer into c-Si of about 30% is verified and 87% of the dopant transferred is electrically active. Consequently, n-MOSFET devices are produced using a gate oxide thermally grown at the same diffusion temperature for one hour. The preliminary results of the MOSFET (channel length and width of 0.5 and 5 mm, respectively) show a depletion behavior with a threshold voltage, Vth=-8.2 V and afield-effect mobility, μFE=187.8 cm2/(Vs).
KW - Amorphous silicon
KW - Crystalline silicon
KW - Dopant diffusion
KW - Low temperature pre-deposition
KW - p-n junctions
UR - http://www.scopus.com/inward/record.url?scp=84975684121&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2015.09.006
DO - 10.1016/j.mssp.2015.09.006
M3 - Article
AN - SCOPUS:84975684121
VL - 42
SP - 210
EP - 214
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
ER -